Component Redistribution during Nb and In/Nb Film Growth on Single-Crystal Silicon

N. N. Afonin; V. A. Logacheva; A. M. Khoviv; V. M. Vakhtel; Yu.S. Shramchenko

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Component Redistribution during Nb and In/Nb Film Growth on Single-Crystal Silicon

机译：单晶硅上Nb和In / Nb薄膜生长过程中的成分重新分布

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The component redistribution during the growth of Nb and In/Nb films on single-crystal silicon has been studied by Rutherford backscattering spectroscopy and X-ray diffraction. The results indicate that magnetron sputtering of indium onto niobium films gives rise to mass transfer across the Nb/Si interface and to niobium and silicon heterodiffusion, accompanied by chemical reactions and the formation of silicides. The likely reason for this is the generation of defects during the magnetron sputtering of indium.

机译：通过卢瑟福反向散射光谱和X射线衍射研究了Nb和In / Nb薄膜在单晶硅上生长过程中的成分重新分布。结果表明，磁控溅射铟到铌膜上会引起跨Nb / Si界面的质量转移以及铌和硅的异质扩散，并伴有化学反应和硅化物的形成。其可能的原因是在磁控溅射铟期间产生缺陷。

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来源
《Inorganic materials》 |2009年第9期|998-1002|共5页
作者
N. N. Afonin; V. A. Logacheva; A. M. Khoviv; V. M. Vakhtel; Yu.S. Shramchenko;
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作者单位

Voronezh State University, Universitetskaya pl. 1, Voronezh,394006 Russia;

Voronezh State University, Universitetskaya pl. 1, Voronezh,394006 Russia;

Voronezh State University, Universitetskaya pl. 1, Voronezh,394006 Russia;

Voronezh State University, Universitetskaya pl. 1, Voronezh,394006 Russia;

Voronezh State University, Universitetskaya pl. 1, Voronezh,394006 Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Component Redistribution during Nb and In/Nb Film Growth on Single-Crystal Silicon

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