Electrical Conductivity of Bi_(12)SiO_(20) Single Crystals Doped with Os, Re, Ru, and RH

T. I. Milenov; M. N. Veleva; D. P. Petrova; M. M. Gospodinov; V. M. Skorikov; A. V. Egorysheva; Yu. F. Kargin; A. Ya. Vasilev

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Electrical Conductivity of Bi_(12)SiO_(20) Single Crystals Doped with Os, Re, Ru, and RH

机译：掺杂有Os，Re，Ru和RH的Bi_（12）SiO_（20）单晶的电导率

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摘要

Bi_(12)SiO_(20) crystals doped with Os, Re, Ru, and Rh were grown by the Czochralski technique, and their conductivity (real and imaginary parts) was measured as a function of temperature and frequency. The results are interpreted as evidence that the charge transport in the crystals is due to hopping along chains of localized states.

机译：通过Czochralski技术生长了掺有Os，Re，Ru和Rh的Bi_（12）SiO_（20）晶体，并测量了其电导率（实部和虚部）随温度和频率的变化。该结果被解释为证明晶体中的电荷传输是由于沿着局部状态的链跳跃而引起的。

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来源
《Inorganic materials》 |2005年第2期|p.152-155|共4页
作者
T. I. Milenov; M. N. Veleva; D. P. Petrova; M. M. Gospodinov; V. M. Skorikov; A. V. Egorysheva; Yu. F. Kargin; A. Ya. Vasilev;
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作者单位

Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko ch. 72, Sofia, 1784 Bulgaria;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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Electrical Conductivity of Bi_(12)SiO_(20) Single Crystals Doped with Os, Re, Ru, and RH

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