Growth and Properties of V-Doped HgSe Crystals

S.Yu.Paranchich; Yu.S.Paranchich; V.N.Makogonenko

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Growth and Properties of V-Doped HgSe Crystals

机译：V掺杂的HgSe晶体的生长和性能

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HgSe crystals with a vanadium concentration ranging from 10~24 to 10~26 M~-3 were grown, and their transport properties were investigated between 77 and 400 K in magnetic fields of up to 12.73kA/m. The effect of long-term annealing in Se vapor on the electron concentration and mobility in the crystals was studied. The n(N_v), μ(T), and R_h(T) data obtained before and after annealing suggest that the V dopant produces a res- Onance donor level in the conduction band of HgSe at E_v≈0.250-0.260 eV.

机译：生长了钒浓度为10〜24到10〜26 M〜-3的HgSe 晶体，并在高达12.73kA / m的磁场中研究了它们在77和400 K之间的传输特性。研究了硒蒸气中长期退火对晶体中电子浓度和迁移率的影响。退火前后获得的n（N_v），μ（T）和R_h（T）数据表明，V掺杂剂在E_v≈0.250-0.260eV的HgSe导带中产生电阻供体能级。

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《Inorganic materials》 |2001年第6期|p.556-559|共4页
作者
S.Yu.Paranchich; Yu.S.Paranchich; V.N.Makogonenko;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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1. Growth and Properties of V-Doped HgSe Crystals [J] . S.Yu. Paranchich, Yu.S. Paranchich, V.N. Makogonenko Неорганические материалы . 2001,第6期

机译：V掺杂的HgSe晶体的生长和性能
2. Growth and Properties of V-Doped HgSe Crystals [J] . S.Yu. Paranchich, Yu.S. Paranchich, V.N. Makogonenko Неорганические материалы . 2001,第6期

机译：V掺杂的Hgse晶体的生长和性质
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Growth and Properties of V-Doped HgSe Crystals

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