Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films

A.N.Gruzintsev; U.Kaiser; I.Ikhodos

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Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films

机译：高纯度六角形GaN膜中蓝色光致发光的精细结构

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The photoluminescence of GaN films grown by molecular-beam epitaxy on 6H-SiC(0001) sub- strates was studied. Owing to the high structural perfection of the films, a series of narrow emission lines related to donor-acceptor recombination was detected in the blue spectral region. This finding lends support to the donor-acceptor origin of the blue emission in GaN. In the spectra of less perfect films, these lines overlap and merge into a broad band.

机译：研究了通过分子束外延在6H-SiC（0001）衬底上生长的GaN薄膜的光致发光。由于膜的高结构完美性，在蓝色光谱区域中检测到一系列与供体-受体重组有关的窄发射线。这一发现为GaN中蓝色发射的供体-受体起源提供了支持。在不太理想的电影的光谱中，这些线重叠并合并成一个宽带。

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来源
《Inorganic materials》 |2001年第6期|p.704-707|共4页
作者
A.N.Gruzintsev; U.Kaiser; I.Ikhodos;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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1. Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films [J] . A.N. Gruzintsev, U. Kaiser, I.I. Khodos Неорганические материалы . 2001,第6期

机译：高纯度六角形GaN薄膜中蓝色光致发光的精细结构
2. Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films [J] . A.N. Gruzintsev, U. Kaiser, I.I. Khodos Неорганические материалы . 2001,第6期

机译：高纯六方 GaN薄膜的蓝色发光特性的精细结构
3. Large bandgap bowing of In_xGa_(1-x)N films and growth of blue/green In_xGa_(1-x)N/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures [J] . Kang Jea Lee, Tae Su Oh, Tae Ki Kim, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：在高拉伸应变GaN / Si（111）异质结构上In_xGa_（1-x）N薄膜的大带隙弯曲和蓝色/绿色In_xGa_（1-x）N / GaN MQW的生长
4. Effect of Growth temperature on thin films structure and Blue Photoluminescence spectrum of Nanocrystalline ZnO films [C] . SONG Guo-li, LIANG Hong International Conference on Mechanical and Electronics Engineering . 2013

机译：纳米晶ZnO膜薄膜结构和蓝色光致发光光谱的生长温度对纳米晶体膜的影响
5. Investigation and modeling of processing-microstructure-property relations in ultra-fine grained hexagonal close packed materials under strain path changes [D] . Yapici, Guney Guven 2007

机译：应变路径变化下超细颗粒六方密堆积材料加工-微观结构-性能关系的研究与建模
6. Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes [O] . Fang Liu, Ye Yu, Yuantao Zhang, 2020

机译：六方BN辅助外延的应变释放的GaN薄膜真正的绿色发光二极管
7. Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC [O] . V. A. Joshkin, C. A. Parker, S. M. Bedair, 1998

机译：在SIC上生长的肝脏近边缘光致发光的精细结构
8. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films [R] . Seo, J. T. , Hoemmerich, U. , Lee, D. C. , 2002

机译：Er掺杂GaN薄膜光致发光的热猝灭

Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films

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