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A reliable PUF in a dual function SRAM

机译：双功能SRAM中的可靠PUF

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摘要

The Internet of Things (IoTs) employs resource-constrained sensor nodes for sensing and processing data that require robust, lightweight cryptographic primitives. The SRAM Physical Unclonable Function (SRAM-PUF) is a potential candidate for secure key generation. An SRAM-PUF is able to generate random and unique cryptographic keys based on start-up values by exploiting intrinsic manufacturing process variations. The reuse of the available on-chip SRAM memory in a system as a PUF might achieve useful cost efficiency. However, as CMOS technology scales down, aging-induced Negative Bias Temperature Instability (NBTI) becomes more pronounced resulting in asymmetric degradation of memory bit cells after prolonged storage of the same bit values. This causes unreliable start-up values for an SRAM-PUF. In this paper, the on-chip memory in the ARM architecture has been used as a case study to investigate reliability in an SRAM-PUF. We show that the bit probability in a 32-bit ARM instruction cache has a predictable pattern and hence predictable aging. Therefore, we propose using an instruction cache as a PUF to save silicon area. Furthermore, we propose a bit selection technique to mitigate the NBTI effect. We show that this technique can reduce the predicted bit error in an SRAM-PUF from 14.18% to 5.58% over 5 years. Consequently, as the bit error reduces, the area overhead of the error-correction circuitry is about 6 x smaller compared to that without a bit selection technique.
机译：物联网（IoT）使用资源受限的传感器节点来感应和处理需要鲁棒，轻量级密码原语的数据。 SRAM物理不可克隆功能（SRAM-PUF）是安全密钥生成的潜在候选者。 SRAM-PUF能够通过利用固有的制造工艺变化，根据启动值生成随机且唯一的加密密钥。将系统中可用的片上SRAM存储器重用为PUF可能会实现有用的成本效益。但是，随着CMOS技术的缩小，老化引起的负偏置温度不稳定性（NBTI）变得更加明显，导致长时间存储相同位值后导致存储位单元的不对称退化。这会导致SRAM-PUF的启动值不可靠。在本文中，ARM架构中的片上存储器已用作案例研究，以研究SRAM-PUF中的可靠性。我们证明了32位ARM指令缓存中的位概率具有可预测的模式，因此具有可预测的老化。因此，我们建议使用指令缓存作为PUF来节省芯片面积。此外，我们提出了一种位选择技术来减轻NBTI效应。我们证明了这项技术可以在5年内将SRAM-PUF中的预测误码率从14.18％降低到5.58％。因此，随着位错误的减少，与没有位选择技术的错误相比，纠错电路的面积开销小约6倍。

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  • 来源
    《Integration》 |2019年第9期|12-21|共10页
  • 作者

    Mispan Mohd Syafiq; Duan Shengyu; Halak Basel; Zwolinski Mark;

  • 作者单位

    Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England|Univ Tekn Malaysia Melaka, Fak Teknol Kejuruteraan Elekt & Elekt, Ctr Telecommun Res & Innovat CeTRI, Durian Tunggal, Malaysia;

    Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England;

    Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England;

    Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Aging; Physical unclonable function; SRAM; Reliability;

    机译：老化;物理不可渗透功能;SRAM;可靠性;

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