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Numerical simulation and analysis of process parameters of GaN-MOCVD reactor

机译：GaN-MOCVD反应器工艺参数的数值模拟与分析

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Commercially, semiconductor thin films for use in electronic devices are typically produced by processes such as chemical vapor deposition. This requires the gas flow, heat distribution, and concentration distribution above the substrate in the reactor to be carefully controlled to ensure that the growth rate and thickness uniformity of the thin film are appropriate. This work involved the simulation of a gallium nitride metal-organic chemical vapor deposition (GaN-MOCVD) reactor with a vertical spray structure. The simulation, which was conducted by using computational fluid dynamics software, enabled us to obtain a numerical solution under steady-flow low-pressure conditions with substrate axisymmetrical rotating. The temperature field, flow field, operating pressure, and rotation speed of the substrate were analyzed, and process conditions were optimized. These conditions make it possible to stabilize the flow field in the reactor to ensure thickness uniformity of the deposited thin film. These results not only provide an effective solution for high-quality epitaxial growth, but also provide a theoretical basis for follow-up experiment and equipment improvement.
机译：在商业上，用于电子设备的半导体薄膜通常通过诸如化学气相沉积的方法来生产。这要求仔细控制反应器中基板上方的气流，热量分布和浓度分布，以确保薄膜的生长速率和厚度均匀性合适。这项工作涉及具有垂直喷射结构的氮化镓金属有机化学气相沉积（GaN-MOCVD）反应器的模拟。通过使用计算流体动力学软件进行的模拟使我们能够在稳定流动的低压条件下，通过轴对称旋转来获得数值解。分析了基板的温度场，流场，工作压力和转速，并优化了工艺条件。这些条件使得可以稳定反应器中的流场以确保沉积的薄膜的厚度均匀性。这些结果不仅为高质量外延生长提供了有效的解决方案，而且为后续实验和设备改进提供了理论基础。

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