• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>International journal of circuit theory and applications >A generalized family of memristor-based voltage controlled relaxation oscillator
【24h】

A generalized family of memristor-based voltage controlled relaxation oscillator

机译：基于忆阻器的广义系列压控弛豫振荡器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Recently, memristive oscillators are a significant topic in the nonlinear circuit theory where there is a possibility to build relaxation oscillators without existence of reactive elements. In this paper, a family of voltage-controlled memristor-based relaxation oscillator including two memristors is presented. The operation of two memristors-based voltage relaxation oscillator circuits is demonstrated theoretically with the mathematical analysis and with numerical simulations. The generalized expressions for the oscillation frequency and conditions are derived for different cases, where a closed form is introduced for each case. The effect of changing the circuit parameters on the oscillation frequency and conditions is investigated numerically. In addition, the derived equations are verified using several transient PSPICE simulations. The power consumption of each oscillator is obtained numerically and compared with its PSPICE counterpart. Furthermore, controlling the memristive oscillator with a voltage grants the design an extra degree of freedom which increases the design flexibility. The nonlinear exponential model of memristor is employed to prove the oscillation concept. As an application, two examples of voltage-controlled memristor-based relaxation oscillator are provided to elaborate the effect of the reference voltage on the output voltage. This voltage-controlled memristor-based relaxation oscillator has nano size with storage property that makes it more efficient compared with the conventional one. It would be helpful in many communication applications.
机译：近年来，忆阻振荡器在非线性电路理论中是一个重要的话题，在这种情况下，有可能在不存在电抗元件的情况下构建张弛振荡器。在本文中，提出了一个基于电压控制忆阻器的张弛振荡器，包括两个忆阻器。通过数学分析和数值模拟，从理论上证明了两个基于忆阻器的电压弛豫振荡器电路的操作。针对不同情况推导了振动频率和条件的通用表达式，其中针对每种情况引入了封闭形式。数值研究了改变电路参数对振荡频率和条件的影响。此外，使用多个瞬态PSPICE仿真验证了导出的方程。通过数字获得每个振荡器的功耗，并将其与PSPICE的功耗进行比较。此外，用电压控制忆阻振荡器可以使设计具有更大的自由度，从而增加了设计的灵活性。利用忆阻器的非线性指数模型来证明振荡概念。作为应用，提供了两个基于电压控制忆阻器的张弛振荡器的示例，以详细说明参考电压对输出电压的影响。这种基于电压控制的忆阻器的弛豫振荡器具有纳米尺寸，具有存储特性，与传统振荡器相比，其效率更高。这将在许多通信应用程序中有所帮助。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号