Towards a circuit theory for metallic single-electron tunnelling devices

J. Hoekstra

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Towards a circuit theory for metallic single-electron tunnelling devices

机译：迈向金属单电子隧穿器件的电路理论

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摘要

A circuit theory for metallic single-electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuits—a fundamental circuit theorem—equivalent circuit elements are proposed and possible physical justifications are presented. The resulting model represents the tunnel event by an impulse current source, the junction by a charged capacitor, and the tunnelling condition as a discrete process based on local circuit parameters—and may include a tunnelling time. Simple examples illustrate Coulomb blockade, Coulomb oscillations, and continuous direct tunnelling.

机译：提出了金属单电子隧穿（SET）结的电路理论。详细描述了在任意环境中具有单个SET结的电路。基于电路中的能量守恒（一个基本的电路定理），提出了等效的电路元件，并提出了可能的物理依据。结果模型表示为脉冲电流源的隧道事件，带电电容器的结点以及基于局部电路参数的离散过程的隧穿条件-可能包括隧穿时间。简单的例子说明了库仑阻塞，库仑振荡和连续直接隧穿。

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来源
《International journal of circuit theory and applications》 |2007年第3期|213-238|共26页
作者
J. Hoekstra;
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作者单位

Electronics Research Laboratory/DIMES, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628CD Delft, The Netherlands;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《化学文摘》(CA);
原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
single-electron tunnelling; circuit theory; SET transistor; quantum mechanical tunnelling; hot-electron; impulse circuit model;

机译：单电子隧穿电路理论SET晶体管;量子力学隧穿热电子脉冲电路模型;

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专利

1. On Circuit Theories for Single-Electron Tunneling Devices [J] . Hoekstra J. IEEE transactions on circuits and systems . I , Regular papers . 2007,第11期

机译：单电子隧穿器件的电路理论
2. SIMON-A simulator for single-electron tunnel devices and circuits [J] . Wasshuber C., Kosina H. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 1997,第9期

机译：SIMON-A仿真器，用于单电子隧道器件和电路
3. Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil [J] . T. Niizeki, H. Kubota, Y. Ando, Journal of Applied Physics . 2005,第10Pt2期

机译：利用金属纳米线作为硬掩模模板制造铁磁单电子隧穿器件
4. MODELING NANOELECTRONIC DEVICES IN CIRCUIT THEORY: THE SINGLE-ELECTRON TUNNELING JUNCTION [C] . Jaap Hoekstra Proceedings vol.2004-03; International Symposium on Microelectronics Technology and Devices(SBMicro 2004); 2004; . 2004

机译：在电路理论中建模纳米电子器件：单电子隧道结
5. Signatures of random matrix theory in metallic clusters, inert gas tunneling devices and vortices in a type II superconductor. [D] . Adams, Laura Lavada Anne. 2005

机译：II型超导体中金属簇，惰性气体隧穿装置和涡旋中随机矩阵理论的特征。
6. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers [O] . Yutaka Majima, Guillaume Hackenberger, Yasuo Azuma, 2017

机译：具有有机和无机混合钝化层的化学组装单电子晶体管上的三输入门逻辑电路
7. Non-Adiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density Functional Theory [O] . Dittmann, Niklas, Splettstoesser, Janine, Helbig, Nicole 2017

机译：单电子隧道器件的非绝热动力学特性时间密度泛函理论
8. Semiconductor Single-Electron Digital Devices and Circuits [R] . Averin, D. V. 1993

机译：半导体单电子数字器件和电路

Towards a circuit theory for metallic single-electron tunnelling devices

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