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首页> 外文期刊>International journal of electrical and power engineering >Electron Transport Characteristics of 6H-SiC and 4H-SiC for High Temperature Device Modeling
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Electron Transport Characteristics of 6H-SiC and 4H-SiC for High Temperature Device Modeling

机译：高温器件建模中6H-SiC和4H-SiC的电子传输特性

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The Monte Carlo method is used to simulate electron transport in bulk wurtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the Γ, K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10~(16)-10~(20) cm~(-3), respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.
机译：使用三谷分析能带结构，使用蒙特卡洛方法模拟6H-SiC和4H-SiC块状纤锌矿相中的电子传输。布里渊区的Γ，K和U对称点处的球形，非抛物线形的导带波谷被拟合到第一原理的带结构。计算出电子漂移速度随温度和电离给体浓度在300-600 K和10〜（16）-10〜（20）cm〜（-3）范围内的变化。与4H-SiC相比，由于深施主能级的自由射出，离子化杂质在6H-SiC中的散射作用得到抑制，声子散射的作用得到增强。对于两种材料，发现仅当电场增加到每种材料唯一的某个特定电场之上的值时，才会发生电子速度超调。该临界场在很大程度上取决于材料参数。

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