Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling

H. Arabshahi; F. Sarlak

首页> 外文期刊>International journal of electrical and power engineering >Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling

【24h】

Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling

机译：高增益器件建模中Zincblende和Wurtzite 6H-SiC结构中低场电子传输的比较

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Temperature and doping dependencies of electron mobility in both wurtzite and zincblende 6H-SiC structures have been calculated using an Iteravive technique. The following scattering mechanisims, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric and electron plasmon are inculded in the calculation. Ionized imurity scattering has been treated beyound the born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100-600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

机译：已使用Iteravive技术计算了纤锌矿和闪锌矿6H-SiC结构中电子迁移率的温度和掺杂依赖性。计算中涉及以下散射机制，即杂质，极性光学声子，声子，压电和电子等离激元。已使用相移分析在天生近似值附近对电离杂质散射进行了处理。发现随着温度从100-600 K升高，电子迁移率单调降低。随着掺杂浓度的增加，电子迁移率的低温值显着增加。迭代结果与使用弛豫时间近似和实验方法获得的其他最新计算结果完全吻合。

著录项

来源
《International journal of electrical and power engineering》 |2011年第1期|p.18-23|共6页
作者
H. Arabshahi; F. Sarlak;
展开▼
作者单位

Department of Physics, Ferdowsi University, Mashhad, Iran;

Department of Physics, Payam-e-Noor University, Fariman, Iran;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
wurtzite; zincblende; ionized impurity scattering; phonon; electron plasmon; doping;

机译：纤锌矿闪锌矿电离杂质散射;声子电子等离子体掺杂;

相似文献

外文文献
中文文献
专利

1. Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling [J] . H. Arabshahi, F. Sarlak International journal of electrical and power engineering . 2011,第1期

机译：高增益器件建模中Zincblende和Wurtzite 6H-SiC结构中低场电子传输的比较
2. Comparison of Low Field Electron Transport in Zincblende and Wurtzite SiC Structures for High Gain Device Modeling [J] . ARABSHAHI Hadi, SARLAK Fatemeh Journal of Applied Computer Science & Mathematics . 2011,第1期

机译：高增益器件建模中Zincblende和Writzite SiC结构中低场电子传输的比较
3. LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION [J] . H. ARABSHAHI, A. A. MOWLAVI Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2009,第10期

机译：求解博尔兹曼方程的迭代模型在锌配合物和纤锌矿GaN结构中的低场电子传输性质
4. Comparison of electron and hloe initiated impact ionization in zincblende and wurtzite phase gallium nitride [C] . E.Bellotti, I.H.Oguzman, J.Kolnik, Symposium on Gallium Nitride and Related Materials II April 1-4,1997,San Francisco,California,U.S.A. . 1997

机译：闪锌矿和纤锌矿相氮化镓中电子和氢氧引发的碰撞电离的比较
5. Devices using ballistic transport of two dimensional electron gas in delta doped gallium arsenide high electron mobility transistor structures. [D] . Kang, Sungmu. 2006

机译：在δ掺杂的砷化镓高电子迁移率晶体管结构中使用二维电子气的弹道传输的器件。
6. Modeling and simulation of electronic structure material interface and random doping in nano electronic devices [O] . Duan Chen, Guo-Wei Wei -1

机译：建模和电子结构材料界面和随机掺杂的仿真在纳米电子器件
7. Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors [O] . Ullah, AR, Burke, AM, Micolich, AP, 2013

机译：使用纳米线晶体管对InAs纤锌矿和闪锌矿相进行电子比较
8. Spin lifetime tuning in zincblende heterostructures and applications to spin devices [R] . Cartoixa, X., Ting, D. Z. -Y., Chang, Y. -C. 2004

机译：在锌闪石异质结构中旋转寿命调整和旋转装置的应用

Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling

摘要

著录项

相似文献

相关主题

期刊订阅