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LNA and Mixer for Broadband Digital Video Broadcasting (DVB) Application Using CMOS Process

机译:适用于采用CMOS工艺的宽带数字视频广播(DVB)应用的LNA和混频器

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摘要

In this study, the broadband Low Noise Amplifier (LNA)/mixer for Digital Video Broadcasting-Satellite (DVB-S2) receiver tuner integrated circuit-fabricated using 0.18 μm Complementary Metal Oxide Semiconductor (CMOS) process is proposed by applying a positive feedback to LNA and adding a Single-ended Differential Converter (SDC) to mixer. And 2 attenuators are used to obtain a good noise performance and high linearity property. The designed CMOS LNA/mixerhave achieved the control of gain with 3 dB step, input second order intercept point (IIP2) of 1.37 dBm and input third order intercept point (IIP3) of-3.6 dBm at high gain low frequency mode. Moreover, a noise figure of 6.4 dB has been achieved at the frequency range from 950-2150 MHz. The LNA circuit consumes a total current of 25 mA together with the supply voltage of 1.8 V and the chip area of LNA and mixer are 0.8×0.53 and 0.8×0.6 mm, respectively.
机译:在这项研究中,通过将正反馈应用于CMOS工艺,提出了采用0.18μm互补金属氧化物半导体(CMOS)工艺制造的宽带低噪声放大器(LNA)/混频器,用于数字视频广播卫星(DVB-S2)接收机调谐器集成电路。 LNA并在混频器中添加一个单端差分转换器(SDC)。使用两个衰减器可获得良好的噪声性能和高线性度。在高增益低频模式下,设计的CMOS LNA /混频器实现了以3 dB步长,1.37 dBm的输入二阶截点(IIP2)和-3.6 dBm的输入三阶截点(IIP3)进行增益控制。此外,在950-2150 MHz的频率范围内已达到6.4 dB的噪声系数。 LNA电路消耗的总电流为25 mA,电源电压为1.8 V,LNA和混频器的芯片面积分别为0.8×0.53和0.8×0.6 mm。

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