Silicon 9 MHz MEMS Based Oscillator with Low Phase Noise and High Quality Factor

FABRIZIO LO CONTE; DANIEL GROGG; ADRIAN MIHAIIONESCU; MAHER KAYAL

首页> 外文期刊>Kwartalnik Elektroniki i Telekomunikacji >Silicon 9 MHz MEMS Based Oscillator with Low Phase Noise and High Quality Factor

【24h】

Silicon 9 MHz MEMS Based Oscillator with Low Phase Noise and High Quality Factor

机译：具有低相位噪声和高品质因数的基于9 MHz硅的硅振荡器

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. In open-loop configuration the tuning fork resonator provide a quality factor of 9400. The benefit of the intrinsic gain for oscillator design is analyzed and an oscillator design is proposed based on these findings. The proposed oscillator is fully CMOS compatible. The achieved performance shows the advantages of an active MEM resonator for the construction of MEM based oscillators.

机译：本文提出了一种基于振动体场效应晶体管（VB-FET）的9.4MHz微机电振荡器。详细介绍了此有源MEM谐振器的电气特性，以实现静态和动态工作。在开环配置中，音叉谐振器的品质因数为9400。分析了固有增益对振荡器设计的好处，并基于这些发现提出了振荡器设计。拟议的振荡器完全兼容CMOS。所获得的性能显示了有源MEM谐振器对于基于MEM振荡器的构造的优势。

著录项

来源
《Kwartalnik Elektroniki i Telekomunikacji》 |2009年第4期|625-637|共13页
作者
FABRIZIO LO CONTE; DANIEL GROGG; ADRIAN MIHAIIONESCU; MAHER KAYAL;
展开▼
作者单位

Electronic Laboratory EPFL, 1015 Lausanne, Switzerland;

rnNanoelectronic Devices Laboratory EPFL, 1015 Lausanne, Switzerland;

rnNanoelectronic Devices Laboratory EPFL, 1015 Lausanne, Switzerland;

rnElectronic Laboratory EPFL, 1015 Lausanne, Switzerland;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
active MEMS; resonator; tunable oscillator; tuning fork; phase noise;

机译：有源MEMS;谐振器可调振荡器音叉;相位噪声;

相似文献

外文文献
中文文献
专利

1. Prediction, simulation, and verification of the phase noise in 80-MHz low-phase-noise crystal oscillators [J] . Huang Xianhe, Chen Pingping, Fu Wei, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2015,第9期

机译：80 MHz低相位噪声晶体振荡器中相位噪声的预测，仿真和验证
2. Low phase-noise autonomous parametric oscillator based on a 226.7 MHz AlN contour-mode resonator [J] . Cassella Cristian, Piazza Gianluca IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2015,第4期

机译：基于226.7 MHz AlN轮廓模式谐振器的低相位噪声自主参数振荡器
3. Low-noise phase lock of high spectral purity 100 MHz VCXO to a high stability 10 MHz reference oscillator [J] . Santarelli G., Lours M. Electronics Letters . 1996,第10期

机译：高频谱纯度100 MHz VCXO的低噪声锁相至高稳定性10 MHz参考振荡器
4. High-Quality Factor MEMS Based Oscillator - Silicon 9MHz Oscillator with Low Phase Noise and High Quality Factor [C] . Fabrizio Lo Conte, Daniel Grogg, Adrian Mihai Ionescu, International Conference on Mixed Design of Integrated Circuits Systems . 2009

机译：基于高质量因子MEMS的振荡器 - 硅9MHz振荡器，具有低相位噪声和高质量因子
5. Modeling and scaling limitations of silicon-germanium HBT low-frequency noise and oscillator phase noise [D] . Tang, Jin 2006

机译：硅锗HBT低频噪声和振荡器相位噪声的建模和缩放限制
6. A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator [O] . Anoir Bouchami, Mohannad Y. Elsayed, Frederic Nabki 2019

机译：基于98dBΩ可调带宽跨阻放大器和Lamé模式谐振器的SubmW 18MHz MEMS振荡器
7. The analysis and design of a 50MHz Colpitts low phase noise crystal oscillator [O] . Yan Wang, Ying Cui, Shiyi Xu 2018

机译：50MHz Colpitts低相噪声晶体振荡器的分析与设计
8. Silicon Permeable Base Transistors for Low-Phase-Noise Oscillator Applications up to 20 GHz [R] . Rathman, D. D., Niblack, W. K. 1988

机译：硅通孔基极晶体管，适用于高达20 GHz的低相位噪声振荡器应用

Silicon 9 MHz MEMS Based Oscillator with Low Phase Noise and High Quality Factor

摘要

著录项

相似文献

相关主题

期刊订阅