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首页> 外文期刊>International Journal of Heat and Mass Transfer >Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain
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Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain

机译：纳米级相变存储单元在脉冲域中瞬态散热的建模

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摘要

As size downscaling and operation speed increasing, understanding thermal dissipation of phase-change random access memory (PCRAM) during pulse interval is of great importance to gain an insight into its internal transient thermal dissipation behavior. A simplified transient thermal dissipation model and a method of extracting time constants, thermal resistances and capacities in the pulse domain based on the resistance-to-pulse-number (R-PN) curve are proposed. The results show that the R-PN curve calculated by the compact HSPICE model agrees with the one by an experiment. Though this simplified transient thermal dissipation model is obtained under the condition of short pulse interval, it can be available for the transient temperature simulation of a cell under any conditions, especially for understanding thermal behavior of cycle times and programmable synapse based on phase-change materials.
机译：随着尺寸缩小和操作速度的提高，了解脉冲间隔期间相变随机存取存储器（PCRAM）的散热对于深入了解其内部瞬态散热行为至关重要。提出了一种简化的瞬态热耗散模型以及一种基于电阻-脉冲数（R-PN）曲线的脉冲域中时间常数，热阻和电容的提取方法。结果表明，由紧凑型HSPICE模型计算出的R-PN曲线与实验结果吻合。尽管此简化的瞬态热耗散模型是在较短的脉冲间隔条件下获得的，但它可用于任何条件下的电池瞬态温度仿真，尤其是对于了解循环时间的热行为和基于相变材料的可编程突触。

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