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首页> 外文期刊>International Journal of Heat and Mass Transfer >Thermal rectifier efficiency of various bulk-nanoporous silicon devices
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Thermal rectifier efficiency of various bulk-nanoporous silicon devices

机译：各种块状纳米多孔硅器件的热整流效率

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摘要

Our objective is to calculate and to compare the rectifying thermal coefficient of various bulk-porous silicon configurations. We consider successively homogeneous devices involving two- and three elements and several graded devices characterized by variable porosity and/or size of the pores along the system. The criterion is to obtain rectifying coefficients different from one in order that thermal rectification be as efficient as possible. In that respect, it turns out that the porous-bulk-porous configurations are of little interest, in contrast to the bulk-porous-bulk systems whose rectifying coefficients may be larger than two and comparable to the values of the simpler two-element bulk-porous devices. Graded systems with either a variable porosity or a variable pore size do not exhibit better results. However, when both poros-ity and pore size are varying along the device, the highest efficiency is obtained.
机译：我们的目标是计算和比较各种体多孔硅结构的整流热系数。我们考虑连续均质的设备，包括两个和三个元素，以及几个分级的设备，这些设备的特征是孔隙率和/或系统中孔隙的大小可变。准则是获得与之一不同的整流系数，以使热整流尽可能有效。在这方面，事实证明，与疏松-疏松-多孔结构相比，其精馏系数可能大于2且可与简单的两元素疏松的值相比的疏松-疏松-疏松系统不感兴趣。 -多孔设备。具有可变孔隙率或可变孔径的分级系统不会显示出更好的结果。但是，当孔隙率和孔径均沿设备​​变化时，可获得最高效率。

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