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首页> 外文期刊>International Journal of Heat and Mass Transfer >Investigating atomic layer deposition characteristics in multi-outlet viscous flow reactors through reactor scale simulations
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Investigating atomic layer deposition characteristics in multi-outlet viscous flow reactors through reactor scale simulations

机译：通过反应器规模模拟研究多出口粘性流反应器中的原子层沉积特性

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In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports and film depositions are investigated in multi-outlet viscous flow reactors through reactor scale simulations. The simulation process is performed on depositions of Al_2O_3 films using trimethylaluminum and ozone as the precursors, and inert argon as the purge gas. The chemistry mechanism used includes both gas-phase and surface reactions. Simulations are performed at a fixed operating pressure of 10 Torr (1330 Pa) and at two substrate temperatures of 250 ℃ and 300 ℃, respectively. Flows inside the reactors are following the continuum approach; as a result, the Navier-Stokes, energy and species transport equations can be used to simulate transient, laminar and multi-component reacting flows. Based on the chemistry mechanism adopted in this study, the amount of oxygen atoms produced from the ozone decomposition is found to be the major reason for discrepancies in oxidation times and deposition rates at different ALD processes. A reactor with fewer outlets minimizes the ALD operational times by reducing both oxidation time and second purge time. In addition, higher deposition rates at a shorter time are obtained by using a reactor with fewer outlets. However, assigning a long enough time for the ozone exposure results in independency of ALD characteristics from the number of outlets such that the growth rates of around 3.78 angstrom/cycle and 4.52 angstrom/cycle are obtained for the substrate temperatures of 250 ℃ and 300 ℃, respectively.
机译：为了使原子层沉积（ALD）工艺的操作时间最短，通过反应器规模模拟，在多出口粘性流反应器中研究了流传输和膜沉积。以三甲基铝和臭氧为前驱体，以惰性氩气为吹扫气，对Al_2O_3薄膜的沉积过程进行了模拟。所使用的化学机理包括气相反应和表面反应。模拟是在10 Torr（1330 Pa）的固定工作压力下以及分别在250℃和300℃的两个基板温度下进行的。反应器内部的流动遵循连续性方法。因此，Navier-Stokes，能量和物质传输方程可用于模拟瞬态，层流和多组分反应流。根据这项研究采用的化学机理，发现臭氧分解产生的氧原子数量是导致在不同的ALD工艺中氧化时间和沉积速率不一致的主要原因。具有更少出口的反应器通过减少氧化时间和第二次吹扫时间将ALD操作时间减至最少。另外，通过使用出口较少的反应器，可以在较短的时间内获得较高的沉积速率。但是，为臭氧暴露分配足够长的时间会导致ALD特性不受出口数量的影响，因此对于250℃和300℃的基板温度，其生长速率分别约为3.78埃/循环和4.52埃/循环， 分别。

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