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首页> 外文期刊>International Journal of Heat and Mass Transfer >Study on thermal and optical properties of high power infrared emitter by utilizing dual interface method
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Study on thermal and optical properties of high power infrared emitter by utilizing dual interface method

机译：利用双界面法研究大功率红外发射器的热和光学性质

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This paper signifies the importance of dual interface method in the determination of real junction-to-board thermal resistance, Rth_(JB) for high power infrared (IR) emitter. Thermal transient measurement and optical test are performed to investigate thermal and optical properties of the IR emitter. In order to identify the exact point of separation between the IR package and cold-plate, dual interface method has been utilized by comparing the structure functions obtained from two thermal transient measurements with different thermal interface layers between the metal-core-printed-circuit-board (MCPCB) and cold-plate. It is found that the real junction-to-board thermal resistance, Rth_(JB) which is the separation point obtained from the structure functions with optical power consideration is 10.15 ±0.05 K/W. In addition, comparison between the IR emitter with different types of die attach (solder and epoxy glue) has also been studied by employing dual interface method to obtain the junction-to-chip thermal resistance Rth_(JB) of 3.79 ± 0.05 K/W.
机译：本文指出了双界面方法对于确定大功率红外（IR）发射器的实际结到板热阻Rth_（JB）的重要性。进行热瞬态测量和光学测试以研究红外发射器的热和光学特性。为了确定IR封装和冷板之间的确切分离点，已采用双界面方法，该方法通过比较两次热瞬态测量获得的结构函数以及金属芯印刷电路板之间的不同热界面层来获得板（MCPCB）和冷板。可以发现，结点到板的实际热阻Rth_（JB）是从结构函数考虑光功率而获得的分离点，为10.15±0.05 K / W。此外，还通过采用双界面方法研究了不同类型的芯片连接（焊料和环氧胶）的红外发射器之间的比较，得出结点至芯片的热阻Rth_（JB）为3.79±0.05 K / W 。

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