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Pool boiling of perfluorocarbon mixtures on silicon surfaces

机译:硅表面上全氟化碳混合物的池沸腾

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The need for higher pool boiling critical heat flux (CHF) in electronic cooling applications has turned attention to the use of binary mixtures of dielectric liquids. The available literature demonstrates that the addition of a liquid with higher saturation temperature, higher molecular weight, higher viscosity and higher surface tension can lead to significant enhancement of CHF, beyond what can be achieved through changes in pressure, liquid subcooling, and the product of surface effusivity and heater thickness. The current study focuses on extending the available data on mixture CHF enhancement, as well as pool boiling, on polished silicon surfaces to FC-72/FC-40 mixture ratios of 10%, 15%, and 20% of FC-40 by weight, a pressure range of between 1 and 3 atm, and fluid temperature from 22 to 45 ℃, leading to high subcooling conditions. It is found that peak heat flux can be increased to as high as 56.8 W/cm~2 compared to 25.2 W/cm~2 for pure FC-72 at 3 atm and 22 ℃. It is believed that the increase in the mixture latent heat of evaporation and surface tension, accompanying the depletion of the lower boiling point fluid in the wall region plays the major role in enhancing the critical heat flux for binary mixtures.
机译:在电子冷却应用中对更高的池沸腾临界热通量(CHF)的需求已引起人们对介电液体二元混合物的使用的关注。现有文献表明,添加具有更高饱和温度,更高分子量,更高粘度和更高表面张力的液体可以导致CHF的显着提高,这超出了通过改变压力,液体过冷以及CHF的产物所能达到的目标。表面效率和加热器厚度。当前的研究重点是将抛光硅表面上的混合物CHF增强以及熔池沸腾的可用数据扩展到FC-72 / FC-40混合物的重量比为FC-40的10%,15%和20% ,压力范围为1至3个大气压,流体温度为22至45℃,从而导致较高的过冷条件。研究发现,与之相比,纯FC-72在3个大气压和22℃下的峰值热通量可提高到56.8 W / cm〜2,而纯FC-72为25.2 W / cm〜2。据信,伴随壁区域中较低沸点流体的消耗,蒸发和表面张力的混合物潜热的增加在增强二元混合物的临界热通量方面起着主要作用。

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