Analysis of electrical and thermal responses of n-doped silicon to an impinging electron beam and joule heating

Basil T. Wong; M. Pinar Menguec

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Analysis of electrical and thermal responses of n-doped silicon to an impinging electron beam and joule heating

机译：分析n掺杂硅对撞击电子束和焦耳热的电和热响应

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A detailed numerical simulation for electron-beam heating of n-doped silicon is presented. Electron-beam penetration is modeled using electron-beam transport equation (EBTE). The EBTE is solved by using a Monte Carlo (MC) method to determine the election deposition distributions, including electron density deposition and optical phonon generation. Electron and phonon temperatures of the film are then determined using electron-phonon hydrodynamic equations (EPHDEs) coupled with the deposition distributions obtained from the MC simulation. The combined EBTE and EPHDEs results indicate that an electron beam creates a depletion region near the surface of incidence and causes non-equilibrium between electron and phonon temperatures.

机译：给出了n型掺杂硅电子束加热的详细数值模拟。使用电子束传输方程（EBTE）对电子束穿透进行建模。 EBTE通过使用蒙特卡洛（MC）方法求解来确定选举沉积分布，包括电子密度沉积和光子产生。然后使用电子声子流体动力学方程（EPHDE）结合从MC模拟获得的沉积分布来确定薄膜的电子和声子温度。结合的EBTE和EPHDEs结果表明，电子束在入射表面附近形成耗尽区，并导致电子和声子温度之间不平衡。

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来源
《International Journal of Heat and Mass Transfer》 |2009年第12期|2632-2645|共14页
作者
Basil T. Wong; M. Pinar Menguec;
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作者单位

Department of Mechanical Engineering, University of Kentucky, 318 RGAN Building, Lexington, Kentucky 40506-0108, USA;

Department of Mechanical Engineering, 269 RGAN Building, Lexington, KY 40506, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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Analysis of electrical and thermal responses of n-doped silicon to an impinging electron beam and joule heating

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