• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>International Journal of Heat and Mass Transfer >Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth
【24h】

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

机译：氮化镓外延生长中传输和反应现象的热力学和动力学研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An iodine vapor phase epitaxy (IVPE) system has been designed and built to grow high quality thick gallium nitride film at the growth rate up to 80 μm/h with the deposition temperature of 1050 ℃ and the pressure of 200 torr. Numerical and experimental studies have been performed to investigate heat and mass transport and reaction phenomena in a vertical reactor. Geometrical parameters and operating conditions are optimized to achieve high and uniform GaN deposition rate. Gas phase and surface reactions in the growth chamber have been analyzed thermodynamically and kinetically, and primary transport species and important reactions are identified. The rate expressions for different surface reactions are determined and their contributions to the GaN deposition rate are studied for different V/III ratios. The sticking probability of the main reactants and adsorption activation energy are calculated.
机译：设计并建立了碘汽相外延（IVPE）系统，以在1050℃的沉积温度和200托的压力下以高达80μm/ h的生长速度生长高质量的厚氮化镓膜。已经进行了数值和实验研究，以研究立式反应器中的热量和质量传输以及反应现象。优化了几何参数和工作条件，以实现高且均匀的GaN沉积速率。已对生长室中的气相和表面反应进行了热力学和动力学分析，并确定了主要的运输物质和重要的反应。确定了不同表面反应的速率表达式，并研究了它们在不同V / III比下对GaN沉积速率的影响。计算出主要反应物的粘附概率和吸附活化能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号