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首页> 外文期刊>International Journal of Heat and Mass Transfer >Unsteady heat and mass transfer on the codeposition of SiO_2/GeO_2 during the modified chemical vapor deposition process
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Unsteady heat and mass transfer on the codeposition of SiO_2/GeO_2 during the modified chemical vapor deposition process

机译：改进的化学气相沉积过程中SiO_2 / GeO_2的共沉积上的不稳定传热和传质

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摘要

A numerical analysis of unsteady heat and mass transfer on the codeposition of SiO_2 and GeO_2 in the modified chemical vapor deposition has been carried out. An earlier study showed that the optimized torch speed variation could be used to enhance the deposition uniformity of single component SiO_2 particle. However, this optimized torch speed resulted in the deterioration of GeO_2 deposition uniformity for multi-component SiO_2/GeO_2 deposition in the present study. To ensure the uniformity of both SiO_2 and GeO_2, a control strategy may need variations of two parameters at Ieast. Parametric studies, varying three different operating conditions over time (maximum wall temperature, torch speed and in-take amount of GeCl_4), reveals that the uniformity of SiO_2 deposition can be maintained by torch speed variation and that of GeO_2 can be obtained by increasing the in-take flow rate of GeCl_4 over time.
机译：对改性化学气相沉积中SiO_2和GeO_2共沉积的非稳态传热和传质进行了数值分析。较早的研究表明，优化的割炬速度变化可用于增强单组分SiO_2颗粒的沉积均匀性。然而，在本研究中，这种最佳的炬速导致多组分SiO_2 / GeO_2沉积的GeO_2沉积均匀性下降。为了确保SiO_2和GeO_2的均匀性，控制策略可能需要至少改变两个参数。参数研究随时间改变三种不同的操作条件（最高壁温，割炬速度和GeCl_4的摄入量），结果表明，割炬速度的变化可以保持SiO_2沉积的均匀性，而增加Og可以获得GeO_2的均匀性GeCl_4随时间的进气流量。

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