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首页> 外文期刊>International journal of mechanics and materials in design >Response analysis of MEMS based high-g acceleration threshold switch under mechanical shock
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Response analysis of MEMS based high-g acceleration threshold switch under mechanical shock

机译：基于MEMS基于机械冲击的高G加速度阈值开关的响应分析

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摘要

Failures of MEMS devices under shock are due to the overlap of the static and moving parts. The shock response of the microstructure under mechanical shock is investigated in this paper. This work presents modelling and simulation of the microstructures such as microcantilever, fixed-fixed flexure and serpentine structure and is further extended to optimize the response of high-g acceleration threshold switch under mechanical shock. The latching threshold for the high-g acceleration switch is estimated using the geometrical structure. The natural frequency of the serpentine spring-mass structure is selected to achieve the required displacement for latching. The dimensions of the switch are optimized in accordance with the natural frequency and to meet the requirement of latching for a given shock. The switch is fabricated on silicon on insulator wafer with a deep reactive ion etching process. The switch is tested on the static mechanical shock of 3500 g and shows a good agreement between analytical, numerical and experimental results.
机译：震动下的MEMS器件的故障是由于静态和移动部件的重叠。本文研究了机械冲击下微观结构的冲击响应。该工作提出了微观镜，固定固定弯曲和蛇形结构的微观结构的建模和模拟，并且进一步扩展以优化机械冲击下的高G加速度阈值开关的响应。使用几何结构估计高G加速开关的锁存阈值。选择蛇纹石弹簧质量结构的固有频率以实现锁定所需的位移。交换机的尺寸根据自然频率进行优化，并满足给定休克的锁定要求。该开关在绝缘体晶片上制造了硅，具有深度反应离子蚀刻工艺。该开关在3500克的静态机械冲击下进行测试，并在分析，数值和实验结果之间显示出良好的一致性。

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