机译:具有130nm SiGe BiCMOS底部LO配置的80GHz频段低功率次谐波混频器IC
Waseda Univ, Grad Sch Informat Prod & Syst, Wakamatsu Ku, 2-7 Hibikino, Kitakyushu, Fukuoka, Japan;
Waseda Univ, Grad Sch Informat Prod & Syst, Wakamatsu Ku, 2-7 Hibikino, Kitakyushu, Fukuoka, Japan;
DENSO CORP, Res Labs, 500-1 Minamiyama,Komenoki Cho, Nisshin, Aichi, Japan;
Waseda Univ, Grad Sch Informat Prod & Syst, Wakamatsu Ku, 2-7 Hibikino, Kitakyushu, Fukuoka, Japan;
W-band; 130-nm SiGe BiCMOS; Sub-harmonic mixer; CECCTP; Bottom-LO-configuratoin; Marchand Balun; Low power;
机译:10 GHz SiGe BiCMOS次谐波吉尔伯特混频器,使用完全对称和延时补偿的本振单元
机译:130-NM SiGE BICMOS的440-540-GHz次谐搅拌机
机译:480-GHz传感器,具有次谐波搅拌机和130nm SiGe BICMOS技术的集成换能器
机译:130纳米SiGe BiCMOS中的W波段低功率次谐波混频器IC
机译:用于光通信变送器的SiGe BICMOS集成电路=光学通信变送器的SiGe BICMOS集成电路
机译:具有认知峰值的50 MHz–10 GHz低功率电阻反馈电流复用混频器用于认知无线电接收器
机译:A 100-140 GHz SiGe-BICMOS子谐波下变频器搅拌机