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80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

机译:具有130nm SiGe BiCMOS底部LO配置的80GHz频段低功率次谐波混频器IC

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摘要

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only (-)7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.
机译:本文采用130nm SiGe BiCMOS技术设计,制造并测量了W波段(80 GHz)次谐波混频器(SHM)IC。提出的SHM IC利用底部LO配置的公共发射极公共集电极晶体管对结构来降低LO功率要求,并采用尾电流源来平坦化转换增益。片上Marchand平衡-不平衡转换器专为W波段晶圆上测量而设计。本文介绍的SHM IC在80 GHz RF信号下显示出3.9 dB的转换增益,在39.5 GHz下LO功率仅为(-)7 dBm。混频器内核在3.3 V的电源电压下仅消耗0.68 mA的电流。

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