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A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links

机译:GaN MMIC Doherty与组合式AB类功率放大器在微波无线电链路中的全面比较

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摘要

A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition.
机译:此处介绍并比较了组合的AB类AB和Doherty功率放大器,用于7 GHz频带中的微波回程。它们以相同的GaN单片工艺制造,并且具有相同的总有源器件外围。对于给定的应用,讨论了两种架构的线性效率折衷。这两个模块已经在线性和非线性连续波条件下得到了彻底的表征。然后,为了评估实际工作条件下的线性度,已经进行了系统级的表征,施加了调制的输入信号,并比较了有数字预失真和无数字预失真的两个放大器的频谱响应。两个电路均达到40 dBm的饱和输出功率。在6 dB的输出补偿下,Doherty放大器的效率为33%,比AB类模块的效率高10个点。另一方面,系统级测量表明,采用相同的预失真器复杂度以符合参考标准发射掩模,Doherty放大器至少需要1 dB的额外补偿。这对其效率产生负面影响,因此降低了它在连续波条件下相对于AB类放大器可享有的优势。

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