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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Equivalent circuit model of reliable RF-MEMS switches for component synthesis,fabrication process characterization and failure analysis
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Equivalent circuit model of reliable RF-MEMS switches for component synthesis,fabrication process characterization and failure analysis

机译：用于组件合成，制造过程表征和故障分析的可靠RF-MEMS开关的等效电路模型

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摘要

An accurate and very large band (30-110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (V_(pout) ＞ 36 V and ∣V_(PIN - V_(POUT)∣ ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.
机译：提出了一种基于标准250 nm BiCMOS技术的电容RF-MEMS组件的精确且超宽带（30-110 GHZ）集总元件等效电路模型。该模型能够预测制造过程分散的影响，合成新组件并监视故障机制。此外，进行可靠性研究以定义筛选标准（V_（pout）＞ 36 V和∣V_（PIN-V_（POUT）∣≤1）），根据该筛选标准，选择性能最佳的器件最终，提出了一种非常有效的技术（非介入式）来执行此操作。

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