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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Active frequency-tripler MMICs for 300 GHz signal generation
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Active frequency-tripler MMICs for 300 GHz signal generation

机译:有源三频MMIC,可产生300 GHz信号

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摘要

Two frequency-tripler monolithic microwave integrated circuits (MMICs) reaching sub-millimeter-wave output frequencies of 315 GHz are presented. The convenient integration of transistor-based field effect transistor (FET) frequency multipliers into multifunctional MMICs is shown by integration of a single-stage frequency-tripler with a buffer amplifier generating - 0.5 dBm of peak output power at 288. Without post-amplification an average output power of -10.1 dBm in the output frequency range from 285 to 315 is measured with 10 dBm of input power. The 3-dB bandwidth is more than 30 GHz and could not be determined exactly due to the measurement setup. Both MMICs are realized in a 50 nm meta-morphic high electron mobility transistor (HEMT) transistor technology. A multiple power-meter measurement technique including a waveguide filter is used to measure accurately the second harmonic power content within the output spectrum.
机译:提出了达到315 GHz的亚毫米波输出频率的两个频率三重单片微波集成电路(MMIC)。通过将单级分频器与缓冲放大器集成在一起,可以将基于晶体管的场效应晶体管(FET)倍频器方便地集成到多功能MMIC中,在288处产生-0.5 dBm的峰值输出功率。在285至315的输出频率范围内,-10.1 dBm的平均输出功率是用10 dBm的输入功率测得的。 3-dB带宽超过30 GHz,由于测量设置而无法精确确定。两种MMIC均采用50 nm形变高电子迁移率晶体管(HEMT)晶体管技术实现。包含波导滤波器的多重功率计测量技术用于精确测量输出频谱内的二次谐波功率含量。

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