Division by current: a new approach to FET capacitance modeling

STEPHEN MAAS

首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Division by current: a new approach to FET capacitance modeling

【24h】

Division by current: a new approach to FET capacitance modeling

机译：按电流划分：FET电容建模的新方法

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

机译：本文介绍了一种新的场效应晶体管（FET）器件电容建模方法，我们将其称为电流除法。将其与现有公式进行比较，我们将其称为电容除法和电荷除法。为此，有必要对非线性电容理论进行规范化，并澄清许多问题。这些包括电荷守恒和根据电容测量确定电荷功能，这在文献中经常被遗漏。我们发现按当前公式进行划分是可行的，并且在FET模型的生成和电路仿真中具有明显的优势。

著录项

来源
《International Journal of Microwave and Wireless Technologies》 |2011年第1期|p.1-9|共9页
作者
STEPHEN MAAS;
展开▼
作者单位

Nonlinear Technologies, Inc., P.O. Box 7284, Long Beach, CA 90807, USA;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
fet; modeling; capacitance; nonlinear charge functions;

机译：脚造型;电容;非线性电荷函数;

相似文献

外文文献
中文文献
专利

1. Compact Modeling of Charge, Capacitance, and Drain Current in III–V Channel Double Gate FETs [J] . Chandan Yadav, Mayank Agrawal, Amit Agarwal, IEEE transactions on nanotechnology . 2017,第2期

机译：III–V通道双栅极FET中电荷，电容和漏极电流的紧凑模型
2. A Physics-Based Compact Model of III–V FETs for Digital Logic Applications: Current–Voltage and Capacitance–Voltage Characteristics [J] . Oh S., Wong H.-S. P. Electron Devices, IEEE Transactions on . 2009,第12期

机译：用于数字逻辑的基于物理的III–V FET紧凑模型：电流-电压和电容-电压特性
3. Analytical modeling of surface potential, capacitance and drain current of heterojunction TFET [J] . Sarabjeet Kaur, Ashish Raman, Rakesh Kumar Sarin Applied Physics . 2020,第10期

机译：异质结TFET的表面电位，电容和漏极电流的分析模型
4. Division by current: A new approach to FET capacitance modeling [C] . Maas Stephen 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC) . 2010

机译：按电流划分：FET电容建模的新方法
5. Study of inversion capacitances and drive currents for MOSFETs made of high-mobility semiconductors. [D] . Lubow, Abigail. 2009

机译：研究由高迁移率半导体制成的MOSFET的反向电容和驱动电流。
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric. [O] . Hakim M. M. A. 2002

机译：具有高K介质的深亚微米mOsFET中直接隧穿栅极电流和栅极电容的建模。
8. Health Hazard Evaluation Report: HETA-2010-0044-3109, California Occupational Safety and Health Administration, Division of Occupational Safety and Health, Oakland, California, May 2010. NIOSH Investigation of 3M Model 8000 Filtering Facepiece Respirator as Requested by the California Occupational Safety and Health Administration, Division of Occupational Safety and Health [R] . Berry Ann, R. 2010

机译：健康危害评估报告：HETa-2010-0044-3109，加利福尼亚州奥克兰职业安全与健康部加州职业安全与健康管理局，2010年5月。加利福尼亚职业安全要求的NI模型8000过滤面罩呼吸器NIOsH调查职业安全健康科及卫生署

Division by current: a new approach to FET capacitance modeling

摘要

著录项

相似文献

相关主题

期刊订阅