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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >On the evaluation of the high-frequency load line in active devices
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On the evaluation of the high-frequency load line in active devices

机译:关于有源器件中高频负载线的评估

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摘要

In this work a de-embedding technique oriented to the evaluation of the load line at the intrinsic resistive core of microwave FET devices is presented. The approach combines vector high-frequency nonlinear load-pull measurements with an accurate description of the reactive nonlinearities, thus allowing one to determine the actual load line of the drain-source current gen erator under realistic conditions. Thanks to the proposed approach, the dispersive behavior of the resistive core and the com patibility of the voltage and current waveforms with reliability requirements can be directly monitored. Different experiments carried out on a gallium nitride HEMT sample are reported.
机译:在这项工作中,提出了一种去嵌入技术,该技术旨在评估微波FET器件的固有电阻核心处的负载线。该方法将矢量高频非线性负载-牵引测量结果与无功非线性的准确描述结合在一起,从而使人们可以在实际条件下确定漏源电流发生器的实际负载线。由于所提出的方法,可以直接监测电阻芯的色散特性以及电压和电流波形与可靠性要求的兼容性。报道了对氮化镓HEMT样品进行的不同实验。

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