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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology
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Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology

机译：BiCMOS SiGe：C技术在恶劣条件下对新兴RF和毫米波应用的可靠性分析：可靠性电路设计方法的建议

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摘要

In this contribution, the impact of extreme environmental conditions in terms of energy-level radiation of protons on silicon-germanium (SiGe)-integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (low-noise amplifiers) are used as carriers for assessing the impact of aggressive stress conditions on their performances. Perspectives for holistic modeling and characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drift in DC and radio frequency (RF) characteristics) for active samples are down to allow for optimal solutions in pushing SiGe technologies toward applications with harsh and radiation-intense environments (e.g. space, nuclear, military). Specific design prototypes are built for assessing mission-critical profiles for emerging RF and mm-wave applications.
机译：在此贡献中，对质子能级辐射方面的极端环境条件对硅锗（SiGe）集成电路的影响进行了实验研究。包括线性（无源互连/天线）和非线性（低噪声放大器）的典型结构用作评估侵蚀性应力条件对其性能的影响的载体。考虑到各种有源样品的相互作用机制（基体电阻率变化，耦合/干扰，直流漂移和射频（RF）特性）的整体建模和表征方法的前景逐渐减弱，从而为将SiGe技术推向苛刻应用提供了最佳解决方案和辐射密集的环境（例如太空，核，军事）。专为评估新兴的RF和毫米波应用的关键任务配置文件而设计的特定设计原型。

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