A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS

Issakov Vadim; Rimmelspacher Johannes; Trotta Saverio; Tiebout Marc; Hagelauer Amelie; Weigel Robert

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A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS

机译：40-nm CMOS的52至67 GHz双核推挽VCO

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摘要

We present a continuously tunable 52-to-67 GHz push-push dual-core voltage-controlled oscillator (VCO) in a 40 nm bulk complementary metal-oxide-semiconductor (CMOS) technology. The circuit is suitable for 60 GHz frequency-modulated-continuous-wave radar applications requiring a continuously tunable ultra-wide modulation bandwidth. The LC-tank inductor is used to couple the two VCO cores. The fundamental frequency of the VCO can be tuned from 26 to 33.5 GHz, which corresponds to a frequency tuning range of 25%. The second harmonic is extracted in a non-invasive way using a transformer. The primary side acts simultaneously as a second harmonic filter. The VCO achieves in measurement a low phase noise of -91.8 dBc/Hz at 1 MHz offset at 62 GHz and an output power of -20 dBm. The VCO including buffers dissipates in the dual-core operation mode 60 mA from a single 1.1 V supply and consumes a chip area of 0.58 mm(2).

机译：我们提出了一种采用40 nm大容量互补金属氧化物半导体（CMOS）技术的可连续调谐的52至67 GHz推-推双核压控振荡器（VCO）。该电路适合需要连续可调超宽调制带宽的60 GHz频率调制连续波雷达应用。 LC储罐电感器用于耦合两个VCO磁芯。 VCO的基本频率可以从26调谐到33.5 GHz，这对应于25％的频率调谐范围。使用变压器以非侵入方式提取二次谐波。一次侧同时充当二次谐波滤波器。在测量中，VCO在62 GHz处在1 MHz偏移处实现了-91.8 dBc / Hz的低相位噪声和-20 dBm的输出功率。包含缓冲器的VCO在双核工作模式下从1.1 V单电源消耗60 mA电流，消耗的芯片面积为0.58 mm（2）。

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《International Journal of Microwave and Wireless Technologies》 |2018年第7期|783-793|共11页
作者
Issakov Vadim; Rimmelspacher Johannes; Trotta Saverio; Tiebout Marc; Hagelauer Amelie; Weigel Robert;
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1. A 190 GHz VCO with Transformer-Based Push-Push Frequency Doubler in 40 nm CMOS [J] . Liu Yibo, Mao Luhong, Xie Sheng, Circuits, systems, and signal processing . 2019,第1期

机译：具有基于变压器的推挽倍频器的190 GHz VCO，位于40 nm CMOS中
2. An 80-100 GHz VCO using auxiliary cross-coupled pair and push-push topology in 0.18-mu m CMOS [J] . Huang Jui-Chi, Wang Sen, Tsai Ting-Yi Microwave and optical technology letters . 2019,第1期

机译：使用辅助交叉耦合对的80-100 GHz VCO和0.18-MU M CMOS的推送拓扑
3. Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range [J] . Koo Hyunji, Kim Choul-Young, Hong Songcheol Circuits and Systems I: Regular Papers, IEEE Transactions on . 2015,第7期

机译：高效率和宽调谐范围的基于239 GHz CMOS推挽式变压器的VCO的设计与分析
4. A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS [C] . Vadim Issakov, Johannes Rimmelspacher, Saverio Trotta, European Microwave Conference . 2017

机译：采用40nm CMOS的52至67 GHz双核推挽VCO
5. A comparative study on the design of 2.4 GHz VCOs in a 0.13 micron CMOS process [D] . Lii, Han-Ting Hank 2007

机译：在0.13微米CMOS工艺中设计2.4 GHz VCO的比较研究
6. A VCO-Based CMOS Readout Circuit for Capacitive MEMS Microphones [O] . Andres Quintero, Fernando Cardes, Carlos Perez, 2019

机译：基于VCO的电容MEMS麦克风的CMOS读出电路
7. A 120 GHz QVCO with 16.2 GHz tuning range resistent against VCO pulling in 45 nm CMOS [O] . Volkaerts Wouter, Steyaert Michiel, Reynaert Patrick 2014

机译：具有16.2 GHz调谐范围的120 GHz QVCO可以抵抗45 nm CMOS中的VCO拉动
8. 192 GHz Push-Push VCO in 0.13-micrometer CMOS [R] . Cao, C. , Seok, E. , O, K. K. 2006

机译：采用0.13微米CmOs的192 GHz push-push VCO

A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS

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