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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Single transistor low phase noise active dielectric resonator oscillator
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Single transistor low phase noise active dielectric resonator oscillator

机译：单晶体管低相位噪声有源介质谐振器振荡器

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摘要

In this paper, the design theory of an 8 GHz oscillator with a new structure of active dielectric resonator (DR) is presented. The new structure emphasizes on phase noise reduction by using only one active device. The proposed structure uses additional feedback from transistor to resonator in order to increase the quality factor. Measurement results report that phase noise is reduced to -145.19 dBc/Hz at 100 kHz offset frequency which represents 12 dB improvement compared with oscillators with passive DR. Also, in comparison with conventional active resonator oscillators, noise source of the second amplifier which makes spurious oscillation is removed. The size and power consumption are reduced due to the use of a single transistor. This structure has the lowest phase noise in comparison with other DR oscillators. In order to implement the proposed oscillator, a circuit including amplifier, resonator, coupler, and phase shifter is designed and realized.
机译：本文提出了一种具有新型有源电介质谐振器（DR）结构的8 GHz振荡器的设计原理。新结构强调仅使用一个有源器件就可以降低相位噪声。所提出的结构使用了从晶体管到谐振器的附加反馈，以提高品质因数。测量结果表明，在100 kHz偏移频率下，相位噪声降至-145.19 dBc / Hz，与无源DR振荡器相比，改善了12 dB。而且，与常规的有源谐振器振荡器相比，消除了产生寄生振荡的第二放大器的噪声源。由于使用单个晶体管，因此尺寸和功耗得以降低。与其他DR振荡器相比，这种结构具有最低的相位噪声。为了实现所提出的振荡器，设计并实现了包括放大器，谐振器，耦合器和移相器的电路。

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