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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
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A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

机译：基于脉冲S参数测量的GaN Hemts流线型漏极滞后模型

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摘要

Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.
机译：准确且有效地建模漏极滞后效果对于氮化镓高电子迁移率晶体管的非线性大信号建模是至关重要的。本文介绍了一种基于行业标准大信号模型的简化且精确的漏极滞后模型，即通过脉冲S参数测量提取的Chalmers（Angelov）模型，提取。代替复杂的非线性漏极滞后描述，只需要确定所提出的漏极滞后模型的四个恒定参数，以便精确描述漏极滞后效果的大冲击，例如漏极源电流坍落度，典型的扭结观察到脉冲IV曲线，以及输出功率的劣化。参数的提取过程基于脉冲S参数测量，其允许冷冻陷阱并将捕获效果与自加热隔离。还表明该模型可以非常精确地预测宽范围的漏极偏置电压上的负载拉动性能。最后，低频的大信号网络分析器测量用于在大信号条件下进一步验证在时域中的输出电流预测中的所提出的漏极滞后模型。

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