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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes
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Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

机译：施加在大学载波光电二极管上的去嵌入技术研究

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摘要

The generation and transmission of millimeter-wave signals for 5G applications require the use of broadband and high output power photodetectors to bridge from the optical and electronic domains. Therefore, the deep knowledge on the equivalent circuit characteristics of these devices is vital. This study reviews and analyzes de-embedding techniques contributing to the characterization of the physical aspects within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to their active area allowing the extraction of their series resistance and junction capacitance toward the synthesis of an equivalent circuit with lumped elements. The open-short technique is examined and a systematic error introduced by this process underlines the vulnerability of the method on removing parasitics with higher complexity. This error is quantified leading to the implementation of a corrected equation converging with the characteristic features of an S-parameter-based de-embedding. These characteristics are also analyzed through simulation approaches showing minimal equivalent inaccuracies on eliminating more complex symmetrical parasitics. A thorough comparison between these three methods is conducted through the calculation of lumped components corresponding to the active region of diodes with different sizes.
机译：用于5G应用的毫米波信号的生成和传输需要使用宽带和高输出功率光电探测器从光学和电子畴桥接。因此，对这些设备的等效电路特性的深度知识是至关重要的。该研究评估和分析了促进了对大学载波光电二极管的有源区内的物理方面的表征的解除嵌入技术。解除嵌入方法分析地消除了连接到其有源区的电传动线的寄生效应，允许将它们的串联电阻和结电容提取朝向具有大块元件的等效电路的合成。检查开放简短的技术，此过程引入的系统误差强调了该方法的脆弱性，以通过更高的复杂性去除寄生寄生。定量该错误导致实现了基于S参数的去嵌入的特征特征的校正方程集聚的实现。还通过模拟方法分析这些特征，显示出在消除更复杂的对称寄生剂上的最小等效性不准确性。这三种方法之间的彻底比较是通过对应于具有不同尺寸的二极管的有源区的集总成分来进行。

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