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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >RF CMOS power amplifier using a split inter-stage inductor for IEEE 802.11n applications
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RF CMOS power amplifier using a split inter-stage inductor for IEEE 802.11n applications

机译：使用分离级间电感器的RF CMOS功率放大器，用于IEEE 802.11n应用

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摘要

In this study, we design a differential CMOS power amplifier using a 180-nm SOI RFCMOS process for 802.11n (64-QAM, 20 MHz bandwidth, 9.6 dB peak to average power ratio (PAPR)) applications. To minimize the chip area and mismatch in differential signals, we propose a layout method with an inter-stage matching network using a split inductor. By virtue of the symmetrical layout of the proposed split inductor, the mismatch in the differential signals is minimized, while the interconnection lines between the driver and power stages are shortened to minimize the overall chip area and the loss induced by the resistive parasitic components. The designed power amplifier is measured using a wireless local area network (WLAN) 802.11n signal to verify the feasibility of the proposed layout technique. The power amplifier achieved 20.34 dBm output power, while the measured EVM for the 802.11n applications is satisfied. From the measured results, we successfully prove the feasibility of the proposed power amplifier.
机译：在这项研究中，我们针对802.11n（64-QAM，20 MHz带宽，9.6 dB峰均功率（PAPR））应用设计了一种采用180nm SOI RFCMOS工艺的差分CMOS功率放大器。为了最大程度地减小芯片面积和差分信号中的失配，我们提出了一种采用级联匹配网络的布局方法，该网络使用了分裂电感器。借助于所提出的分离电感器的对称布局，差分信号的失配得以最小化，而驱动器和功率级之间的互连线则得以缩短，以最小化整体芯片面积以及由电阻性寄生组件引起的损耗。使用无线局域网（WLAN）802.11n信号对设计的功率放大器进行测量，以验证所提出的布局技术的可行性。功率放大器获得了20.34 dBm的输出功率，同时满足了802.11n应用所测得的EVM。从测量结果，我们成功地证明了所提出的功率放大器的可行性。

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  • 作者

    Son Minoh; Yoo Jinho; Kang Inseong; Lee Changhyun; Kim Jihoon; Park Ho Jong; Park Young-Bae; Park Changkun;

  • 作者单位

    Soongsil Univ, Coll Informat Technol, Sch Elect Engn, 369 Sangdo Ro, Seoul 06978, South Korea;

    Soongsil Univ, Coll Informat Technol, Sch Elect Engn, 369 Sangdo Ro, Seoul 06978, South Korea;

    Soongsil Univ, Coll Informat Technol, Sch Elect Engn, 369 Sangdo Ro, Seoul 06978, South Korea;

    Soongsil Univ, Coll Informat Technol, Sch Elect Engn, 369 Sangdo Ro, Seoul 06978, South Korea;

    GigaLane Co Ltd, Chip Dev Team, 46 Samsung 1 Ro 5 Gil, Hwaseong Si, Gyeonggi Do, South Korea;

    GigaLane Co Ltd, Chip Dev Team, 46 Samsung 1 Ro 5 Gil, Hwaseong Si, Gyeonggi Do, South Korea;

    GigaLane Co Ltd, Chip Dev Team, 46 Samsung 1 Ro 5 Gil, Hwaseong Si, Gyeonggi Do, South Korea;

    Soongsil Univ, Coll Informat Technol, Sch Elect Engn, 369 Sangdo Ro, Seoul 06978, South Korea;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    CMOS power amplifier; Inductor; Linearity; WLAN; 802.11n;

    机译：CMOS功率放大器;电感器;线性;WLAN;802.11n;

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