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首页> 外文期刊>International journal of numerical methods for heat & fluid flow >Natural convective cooling of electronics contained in tilted hemispherical enclosure filled with a porous medium saturated by water-copper nanofluid
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Natural convective cooling of electronics contained in tilted hemispherical enclosure filled with a porous medium saturated by water-copper nanofluid

机译：倾斜的半球形外壳中装有充满水铜纳米流体饱和的多孔介质的电子器件的自然对流冷却

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Purpose The purpose of this study is to determine the thermal behavior of a hemispherical electronic device contained in a concentric hemispherical enclosure, cooled by means of free convection through a porous medium saturated with a water-copper nanofluid. Influence of various parameters on the thermal state of this device is processed in this work. The high power generated by the dome leads to a Rayleigh number varying in the 5.2 x 10(7)-7.29 x 10(10) range. The volume fraction of the monophasic nanofluid varies between 0 (pure water) and 10 per cent while the base of the hemispherical cavity (disc) is inclined between 0 degrees (horizontal disc with dome facing upward) and 180 degrees (horizontal disc with dome facing downward). Design/methodology/approach The three-dimensional numerical approach is carried out by means of the volume control method associated to the SIMPLE algorithm. Findings The work shows that the average temperature of the active component increases with the Rayleigh number according to a conventional law of the power type. The increase in the angle of inclination also goes with a systematic rise in the average temperature. However, increasing the ratio of the solid-fluid thermal conductivities decreases the average temperature of the component, given the respective contributions of the conductive and natural convective phenomena occurring through the nanofluid saturated porous media. The values of this ratio vary in this work between 0 (interstice between the two hemispheres without porous medium) and 70. Originality/value The correlation proposed in this work allows to calculate the temperature of the active electronic component for all the combinations of the four influence parameters which vary in wide ranges.
机译：目的这项研究的目的是确定包含在同心半球形外壳中的半球形电子设备的热性能，该半球形电子设备通过自由对流通过充满水-铜纳米流体的多孔介质进行冷却。在这项工作中处理了各种参数对设备热状态的影响。圆顶产生的高功率导致瑞利数在5.2 x 10（7）-7.29 x 10（10）范围内变化。单相纳米流体的体积分数在0（纯水）和10％之间变化，而半球形腔体（圆盘）的底部在0度（水平圆盘的圆顶朝上）和180度（水平圆盘的圆顶朝上）之间倾斜向下）。设计/方法/方法三维数值方法是通过与SIMPLE算法关联的音量控制方法来执行的。研究结果表明，根据功率类型的常规定律，有源部件的平均温度随着瑞利数的增加而增加。倾斜角的增加还伴随着平均温度的系统性上升。然而，鉴于通过纳米流体饱和多孔介质发生的导电和自然对流现象的各自贡献，增加固-流体热导率的比率会降低组件的平均温度。在该工作中，该比率的值在0（没有多孔介质的两个半球之间的间隙）和70之间变化。原始性/值通过这项工作提出的相关性，可以计算四种组合的所有活性电子部件的温度影响参数范围广泛。

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