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Silicon planar detectors adapted to slow neutron detection

机译:硅平板探测器适合中子减速

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摘要

Most neutron detectors use some type of conversion material to convert the incident neutrons into secondary charged particles, which can be detected inside the detector bulk afterwards. In these reactions, charged particles and recoil nuclei are emitted, with energies high enough to be distinguished from the gamma ray background. In this way, semiconductor detectors incorporating a layer of a neutron reactive material on top of the substrate can be used as neutron detectors. Based on their experience in the fabrication of radiation detectors, CNM-IMB (National Center of Microelectronics in Barcelona, Spain) has started a new research line in solid-state neutron detectors for imaging or dosimetry. The Geant4 Monte-Carlo simulation package has been used to predict the detection efficiency of planar silicon detectors with a neutron converter layer. At the same time, preliminary tests of silicon pad detectors covered with neutron converters have been carried out in the Autonomous University of Barcelona with a neutron source (~(241)Am-Be).
机译:大多数中子探测器使用某种类型的转换材料将入射的中子转换为次级带电粒子,然后可以在探测器主体内部对其进行检测。在这些反应中,发射出带电粒子和反冲核,其能量足以与伽马射线背景区分开。这样,可以在基板的顶部上结合有中子反应性材料层的半导体检测器用作中子检测器。基于他们在辐射探测器制造方面的经验,CNM-IMB(位于西班牙巴塞罗那的国家微电子中心)已经开始了用于成像或剂量测定的固态中子探测器的新研究线。 Geant4蒙特卡洛仿真程序包已用于预测具有中子转换器层的平面硅探测器的探测效率。同时,在巴塞罗那自治大学使用中子源(〜(241)Am-Be)进行了覆盖有中子转换器的硅垫探测器的初步测试。

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