An Ultrawideband SPST Switch Using Defected Ground Structure Low Pass Filter in 65-nm CMOS Technology

Alit Apriyana Anak Agung; Yue Ping Zhang; Wei Meng Lim

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An Ultrawideband SPST Switch Using Defected Ground Structure Low Pass Filter in 65-nm CMOS Technology

机译：采用65nm CMOS技术中的缺陷接地结构低通滤波器的超宽带SPST开关

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摘要

In this article, we propose a novel concept of applying a defected groundrnstructure low pass filter (DGS LPF) to the design of switches. We highlight that the DGSrnstructure has such advantages as consuming less silicon area and providing another degreernof design freedom to optimize the switch performances. To prove the concept, we analyze,rndesign, and characterize a single-pole single-throw (SPST) switch using a DGS LPF in 65-rnnm CMOS technology. We show that the DGS LPF SPST switch with active size of 125 3rn88 μm2 can cover an ultrawideband from DC to 77 GHz.

机译：在本文中，我们提出了将有缺陷的接地结构低通滤波器（DGS LPF）应用到开关设计的新颖概念。我们着重指出DGSrn结构具有以下优势：消耗更少的硅面积，并提供另一度的设计自由度以优化开关性能。为了证明这一概念，我们使用65nmnm CMOS技术的DGS LPF分析，设计和表征单刀单掷（SPST）开关。我们显示DGS LPF SPST开关的有效尺寸为125 3rn88μm2，可以覆盖从DC到77 GHz的超宽带。

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来源
《International journal of RF and microwave computer-aided engineering》 |2015年第9期|758-768|共11页
作者
Alit Apriyana Anak Agung; Yue Ping Zhang; Wei Meng Lim;
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作者单位

Virtus IC Design Centre, Nanyang Technological University, Nanyang Avenue, Singapore 639798;

Division of Circuits and Systems, School of Electrical and Electronic Engineering, NanyangTechnological University, Nanyang Avenue, Singapore 639789;

Division of Circuits and Systems, School of Electrical and Electronic Engineering, NanyangTechnological University, Nanyang Avenue, Singapore 639789;

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正文语种 eng
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关键词
CMOS; millimeter-wave integrated circuit; SPST; RF switch; HFSS; DGS LPF;

机译：CMOS;毫米波集成电路;SPST;射频开关;HFSS;DGS低通滤波器;

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1. Integrated high bandwidth wave elliptic lowpass switched-current filter in digital CMOS technology [J] . Wilcock R., Al-Hashimi B.M., Wilson P. Electronics Letters . 2005,第5期

机译：数字CMOS技术中的集成高带宽波椭圆形低通开关电流滤波器
2. Single-pole multiple-throw switches with defected ground structure low-pass filter [J] . Alit Apriyana A.A., Yue Ping Zhang, Chang J.S., Microwaves, Antennas & Propagation, IET . 2014,第14期

机译：具有接地结构低通滤波器的单刀多掷开关
3. A simple transformation of improved WLAN band pass to low pass filter using defected ground structure (DGS), defected microstrip structure (DMS) and multilayer-technique [J] . A. Boutejdar, A. Darwish, A. Omar, Journal of Microwaves, Optoelectronics and Electromagnetic Applications . 2013,第1期

机译：使用缺陷接地结构（DGS），缺陷微带结构（DMS）和多层技术将改进的WLAN带通简单转换为低通滤波器
4. A G-Band SPST Switch with 2.4-dB Insertion Loss and Minimum 28.5-dB Isolation Using Grounded Co-Planar Waveguide Folded Coupled Line Topology in 65-nm CMOS Technology [C] . Yunshan Wang, Chun-Nien Chen, Yu Ye, IEEE MTT-S International Microwave Symposium . 2017

机译：G波段SPST开关，具有2.4-DB插入损耗和使用接地的共平面波导折叠耦合线拓扑的最小28.5 dB隔离在65-NM CMOS技术中
5. A switched-current filter in digital-CMOS technology with low charge-injection errors. [D] . Balachandran, Ganesh Kumar. 2001

机译：具有低电荷注入误差的数字CMOS技术中的开关电流滤波器。
6. Low power switched-resistor band-pass filter for neural recording channels in 130nm CMOS [O] . Francesco Centurelli, Alessandro Fava, Pietro Monsurrò, 2020

机译：低功耗开关电阻带通滤波器用于130nm CMOS中的神经记录通道
7. An improvement of defected ground structure lowpass/bandpass filters using H-slot resonators and coupling matrix method [O] . Ahmed Boutejdar, Abbas Omar, Edmund P. Burte, 2011

机译：使用H槽谐振器和耦合矩阵方法改进缺陷的地面结构低通/带通滤波器

An Ultrawideband SPST Switch Using Defected Ground Structure Low Pass Filter in 65-nm CMOS Technology

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