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首页> 外文期刊>International journal of RF and microwave computer-aided engineering >From Device Characterization To System Level Analysis Of Dual Band Pa Design In Sige Technology
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From Device Characterization To System Level Analysis Of Dual Band Pa Design In Sige Technology

机译：从器件特性到Sige技术中双频段Pa设计的系统级分析

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摘要

In this article, the design of a dual-band PA developed in SiGe HBT technology and its system level investigation are presented. Starting from an extensive nonlinear characterization at the device level, by which the optimum load conditions was inferred, an optimized amplifier capable to operate simultaneously at 2.45 and 3.5 GHz was designed. The designed amplifier exhibits in single-band mode operation 9.3 dBm and 13.4 dBm output power (1 dB compression point) at 2.45 GHz and 3.5 GHz, respectively. When working under simultaneous channel amplifications, an higher reduction of the 1 dB compression point at 3.5 GHz, compared with the one at 2.45 GHz, is observed; this reflects in a more significant degradations of system level performance such as the error vector magnitude. The investigation provided in this article and the conclusions suggest new concepts and possible new system architectures for the development of the next generation of multi-band transceiver front-end.
机译：本文介绍了采用SiGe HBT技术开发的双频功率放大器的设计及其系统级研究。从器件级别的广泛非线性特性出发，据此推断出最佳负载条件，然后设计了一种能够同时在2.45和3.5 GHz下工作的优化放大器。设计的放大器在单频带模式下的工作频率分别为2.45 GHz和3.5 GHz，分别为9.3 dBm和13.4 dBm输出功率（1 dB压缩点）。当在同时信道放大下工作时，与2.45 GHz处的压缩点相比，在3.5 GHz处观察到的1 dB压缩点的降低更大。这反映出系统级性能的显着降低，例如误差矢量幅度。本文提供的调查和结论为下一代多频带收发器前端的开发提出了新的概念和可能的新系统架构。

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