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A 10 GHz inductorless active SiGe HBT lowpass filter

机译:一个10 GHz无电感器有源SiGe HBT低通滤波器

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摘要

High-frequency (around 10 GHz) filters are necessary for many applications, inanti-aliasing filters for high-speed data converters or optical communications. ModernSiGe technology allows implementing radio-frequency circuits up to about100 GHz. At the lower frequencies around 10 GHz, the size of passive componentsis a concern, and inductorless designs are used. We present a topology for aninductorless lowpass biquad filter capable of operating at 10 GHz or more in theSTMicroelectronics BiCMOS55 process. The filter is simulated considering temperature,process, biasing and mismatch variations, tested with parametric andMonte Carlo simulations. The layout of the biquad filter has been implemented,and the results of post-layout simulations are reported. The biquad stage has gooddynamic range (45 dB) and power efficiency (0.65 pW/Hz/pole) with respect tocomparable active lowpass filters reported in the literature, and, unlike other filters,only uses NPN devices, which are the only high-speed devices available in manyHybrid Bipolar Transistor (HBT) technologies.
机译:高频(10 GHz左右)滤波器对于许多应用是必需的,在用于高速数据转换器或光通信的抗混叠滤波器中。现代 r nSiGe技术允许实现高达约 r n100 GHz的射频电路。在10 GHz左右的较低频率下,无源组件的尺寸成为一个问题,并且使用了无电感器设计。我们介绍了一种可在STMicroelectronics BiCMOS55工艺中以10 GHz或更高频率运行的无电感低通双二阶滤波器的拓扑。考虑到温度,过程,偏置和失配变化对滤波器进行了仿真,并通过参数和蒙特卡洛仿真进行了测试。双二阶滤波器的布局已实现, r n并报告了布局后仿真的结果。相对于文献中报道的可比有源低通滤波器,双二阶级具有良好的动态范围(45 dB)和功率效率(0.65 pW / Hz / pole),并且与其他滤波器不同,使用NPN设备,这是许多 r n混合双极晶体管(HBT)技术中可用的唯一高速设备。

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