Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN/GaN power amplifiers at different temperatures

著录项

• 来源
  《International journal of RF and microwave computer-aided engineering》 |2020年第9期|e.22345.1-e.22345.9|共9页
• 作者

  Ruizhen Wang; Xing Yang; Liang Zhou; Hao Xie; Dawei Wang; Wen-Yan Yin;

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• 作者单位

  Innovative Institute of Electromagnetic Information and Electronic Integration College of Information Science and Electronic Engineering Zhejiang University Hangzhou China;

  State Key Laboratory of Pulsed Power Laser Technology Electronic Countermeasure Institute National University of Defense Technology Hefei China;

  Center for Microwave and RF Technologies Key Laboratory of Ministry of Education of Design and EMC of High- Speed Electronic Systems Shanghai Jiao Tong University Shanghai China;

  Innovative Institute of Electromagnetic Information and Electronic Integration College of Information Science and Electronic Engineering Zhejiang University Hangzhou China;

  Engineering Research Center of Smart Microsensors and Microsystems of MOE School of Electronics and Information Hangzhou Dianzi University Hangzhou China;

  Innovative Institute of Electromagnetic Information and Electronic Integration College of Information Science and Electronic Engineering Zhejiang University Hangzhou China;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  GaN HEMT; harmonic spur; power amplifier;

  机译：GaN HEMT;谐波刺激;功率放大器;