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A high efficiency dual-band outphasing power amplifier design

机译:高效双带竞争功率放大器设计

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摘要

This article proposes a novel design methodology for dual-band outphasingpower amplifiers (Pas) with back-off efficiency enhancement. While satisfyingload modulation requirements of the Chireix outphasing PA, this workreplaces the quarter-wavelength impedance inverter in the classical structurewith a dual-band impedance inverter. In addition, two dual-band reactancecompensation networks that absorb the transistor parasitic capacitance arestrategically placed. This mitigates the intrinsic reactive loading problem of theoutphasing PA and also reduces circuit complexity. A comprehensive theoreticalformulation of the proposed design is described and verified through theimplementation of a dual-band (2.6 and 3.5 GHz) PA prototype intended forLTE and 5G applications. This amplifier is built upon two 10-W GaN HEMTs,and achieves a maximum power of 44.6 and 43.5 dBm with over 71% and 64%associated drain efficiencies at 2.6 and 3.5 GHz, respectively. At the 6 dB outputback-off points, corresponding efficiencies reached 58.4% and 50.1%,respectively. According to the best of authors' knowledge, this is the first dualbandoutphasing PA work with comparable performances to other load modulationtype PA such as the Doherty.
机译:本文提出了一种新型设计方法,用于双频突出者功率放大器(PAS)具有备用效率增强。虽然满意加载Chireix别的PA的调制要求,这项工作在古典结构中取代四分之一波长阻抗逆变器采用双带阻抗逆变器。此外,两个双频电抗吸收晶体管寄生电容的补偿网络是战略性地放置。这减轻了内在的反应性装载问题迎合PA并还降低了电路复杂性。一个综合理论通过该设计和验证所提出的设计的制剂用于双频(2.6和3.5 GHz)PA原型的实现LTE和5G应用程序。该放大器建在两个10 W GaN Hemts后,并实现最大功率为44.6和43.5 dBm,超过71%和64%相关的排水效率分别为2.6和3.5 GHz。在6 dB输出退出点,相应效率达到58.4%和50.1%,分别。根据最好的作者知识,这是第一个双频段迎合PA与其他负载调制的可比性表演键入pa,如doherty。

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