• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>International journal of RF and microwave computer-aided engineering >The beneficial impact of a p-p~+ junction on DC and analog/radio frequency performance of a vertical super-thin body FET
【24h】

The beneficial impact of a p-p~+ junction on DC and analog/radio frequency performance of a vertical super-thin body FET

机译：P-P〜+接线对垂直超薄体FET的DC和模拟/射频性能的有益影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This article investigates the impact of the p–p~+ junction (at the body-substrateinterface) on different direct current (DC) and analog/radio frequency (RF)performance parameters of a newly invented structure called vertical superthinbody field effect transistor (VSTB FET) through a well-calibrated TCADtool. At a fixed body doping, the influence of p–p~+ junction was inspected fordifferent substrate doping (Ns); which reveals that N_s has a robust control onthe device electrostatics. Interestingly, higher N_s is seen to significantly suppressdifferent short channel effects (SCEs), which in turn helps to improvevarious DC parameters excellently. An increase in N_s from 10~（15） to 10~(18) cm~（-3）improves off-state leakage current and on-to-off current ratio by three ordersof magnitude. Also, such a change in N_s decreases subthreshold swing anddrain-induced-barrier-lowering by 8.78 mV/dec and 11.15 mV/V, respectively.The underlying physics behind such improvement at higher N_s is exploredthrough the off-state channel electron density profiles corresponding to differentN_s values. Further, different analog/RF parameters such as transconductance,input capacitance, gate-drain capacitance, output conductance,gain-bandwidth-product, and transconductance frequency product (TFP) showslight improvement for increasing Ns. In contrast, TGF, GFP, and GTFP offerlarge enhancement at higher Ns. This study is expected to demonstrate the significanceof N_s on device performance.
机译：本文研究了P-P〜+结的影响（在车身基材上不同直流（DC）和模拟/射频（RF）的接口）新发明结构的性能参数称为垂直超级身体场效应晶体管（VSTB FET）通过良好校准的TCAD工具。在固定体掺杂时，检查P-P〜+结的影响不同的衬底掺杂（ns）;这表明n_s对此有一个强大的控制器件静电。有趣的是，较高的N_S被视为显着抑制不同的短信效应（SCES），反过来有助于改善各种直流参数出色。从10〜（15）到10〜（18）cm〜（-3）的增加N_S通过三个订单提高了断开的漏电流和开启电流比率幅度。此外，N_S的这种变化减少了亚阈值摆动排水诱导阻隔降低8.78 mV / DEC和11.15 mV / v。探讨了较高的N_S改善背后的潜在物理物理通过对应于不同的截止状态通道电子密度分布n_s值。此外，不同的模拟/射频参数如跨导，输入电容，漏极电容，输出电导，增益带宽 - 产品和跨导频率产品（TFP）显示增加ns的略微改善。相比之下，TGF，GFP和GTFP提供较高的ns巨大增强。预计这项研究将展示重要性N_S对设备性能的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号