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首页> 外文期刊>Japanese journal of applied physics >Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon
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Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

机译：预非晶硅中硼钝化与碳共注入的时间演化

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The influence of carbon on the evolution of boron deactivation was experimentally investigated. The peak profiles of implanted boron overlapped that of carbon in preamorphized silicon. Different annealing conditions were applied to modulate the injection of interstitials from end-of-range (EOR) defects to the recrystallized region. Transient enhanced diffusion was evident during rapid thermal annealing (RTA) at 600 degrees C while significant boron deactivation caused by carbon coimplantation was observed after solid-phase epitaxial regrowth. The degree of boron deactivation is proportional to the implantation doses of carbon and boron, indicating that the pairing of carbon and boron atoms prevents boron activation. However, carbon prevented further deactivation during additional furnace annealing at 750 degrees C after RTA because carbon blocked the reaction between boron and excess interstitials that were generated from the EOR defects. (C) 2018 The Japan Society of Applied Physics
机译：实验研究了碳对硼失活演化的影响。注入的硼的峰轮廓与预非晶硅中的碳的峰轮廓重叠。应用了不同的退火条件，以调节从范围末端（EOR）缺陷向重结晶区域的间隙注入。在600摄氏度的快速热退火（RTA）过程中，瞬态扩散得到了明显增强，而固相外延长大后，观察到由于碳共注入引起的硼显着失活。硼失活的程度与碳和硼的注入剂量成正比，表明碳和硼原子的配对阻止了硼的活化。但是，碳阻止了RTA之后在750摄氏度下的额外炉内退火过程中进一步失活，因为碳阻止了硼与EOR缺陷所产生的多余间隙之间的反应。 （C）2018日本应用物理学会

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