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首页> 外文期刊>Japanese journal of applied physics >Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters
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Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters

机译：具有受控阈值电压的并五苯薄膜晶体管在增强/耗尽型逆变器中的应用

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摘要

Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15V. (C) 2018 The Japan Society of Applied Physics
机译：已经进行了氧等离子体处理以控制具有通过射频溅射制备的具有SiO 2栅极电介质的有机薄膜晶体管（TFT）中的阈值电压。随着等离子体处理时间的增加，阈值电压在-3.7至3.1 V的范围内线性变化。尽管变化量小于具有热生长的SiO 2的有机TFT的变化量，但是变化趋势与热生长的SiO 2的变化趋势相似。为了在同一基板上实现不同的等离子体处理时间，使用荫罩在SiO2表面上选择特定区域，并用氧等离子体进行处理。使用该工艺，在同一基板上制造了具有负阈值电压的有机TFT和具有正阈值电压的有机TFT。结果，由有机TFT组成的增强/耗尽型反相器在5至15V的电源电压下工作。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第3s2期|03EH03.1-03EH03.5|共5页
  • 作者

    Takahashi Hajime; Hanafusa Yuki; Kimura Yoshinari; Kitamura Masatoshi;

  • 作者单位

    Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan;

    Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan;

    Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan;

    Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan;

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