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首页> 外文期刊>Japanese journal of applied physics >Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers
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Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

机译：具有转移印刷阳极和低温处理的超薄缓冲层的块状异质结有机太阳能电池倒装

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摘要

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (similar to 1 nm) and oxide hole buffer layers improved the open circuit voltage V-OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode. (C) 2018 The Japan Society of Applied Physics
机译：我们研究了由铟锡构成的器件中的空穴缓冲层（氧化钼（MoO3）和天然氧化铜层）和低温处理的电子缓冲层对倒置体异质结有机太阳能电池性能的影响。氧化物（ITO）/聚（乙烯亚胺）（PEI）/氧化钛纳米片（TiO-NS）/聚（3-己基硫代苯）（P3HT）：苯基-C61-丁酸甲酯（PCBM）/氧化物/阳极（Ag或铜）。由于超薄TiO-NS的有效空穴阻挡和电子传输特性，超薄TiO-NS（类似于1 nm）和氧化物空穴缓冲层的插入改善了开路电压V-OC，填充因子和整流特性，并且改善了TiO-NS与氧化物空穴缓冲层之间的功函数差异。 TiO-NS的插入有助于降低ITO / PEI / TiO-NS /电子的活性层界面处的势垒，而氧化物空穴缓冲层的插入有助于降低空穴的势垒。在电容-电压特性的正偏压下，电容的显着增加表明，TiO-NS和MoO3缓冲层的组合有助于电子和空穴的选择性传输，并在有源层/氧化物界面处阻挡了反载流子。由于倒置单元中Cu表面的功函数的增加，铜电极的天然氧化物层也用作空穴缓冲层。转移印刷到活性层上的蒸发MoO3和Cu层的电池性能几乎与直接蒸发到活性层上的MoO3和Ag层的电池性能相当。我们还证明了以全印刷MoO3和低温处理的银纳米粒子为阳极的电池具有可比的器件性能。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第3s2期|03EJ07.1-03EJ07.6|共6页
  • 作者

    Itoh Eiji; Sakai Shota; Fukuda Katsutoshi;

  • 作者单位

    Shinshu Univ, Dept Elect & Comp Engn, Nagano 3808553, Japan;

    Shinshu Univ, Dept Elect & Comp Engn, Nagano 3808553, Japan;

    Kyoto Univ, Off Soc Acad Collaborat Innovat, Ctr Adv Sci & Innovat, Uji Campus, Uji, Kyoto 6110011, Japan;

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