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首页> 外文期刊>Japanese journal of applied physics >Effects of gas residence time of CH_4/H_2 on sp~2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition
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Effects of gas residence time of CH_4/H_2 on sp~2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition

机译：CH_4 / H_2的气体停留时间对自由基注入等离子体增强化学气相沉积过程中非晶碳膜sp〜2分数和离解甲基密度的影响

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摘要

Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp(2) fraction of amorphous carbon(a-C)films were performed. The sp(2) fraction of the a-C films reached a minimum of 48%, where the CH3 density was maximum for a residence time of 6 ms. The sp(2) fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties. (C) 2018 The Japan Society of Applied Physics.
机译：进行自由基注入等离子体增强化学气相沉积过程中CH3密度的四重质谱测量，以考虑非晶碳（a-C）膜的sp（2）分数。 a-C膜的sp（2）比例达到最小值48％，其中CH3密度在6 ms的停留时间内最大。在沉积过程中，使用气相CH3密度调整a-C膜的sp（2）比例。该知识有助于理解a-C膜中键合结构的形成机理，从而可以精确控制其电子性能。 （C）2018年日本应用物理学会。

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  • 来源
    《Japanese journal of applied physics》 |2018年第6s2期|06JE03.1-06JE03.4|共4页
  • 作者

    Sugiura Hirotsugu; Jia Lingyun; Kondo Hiroki; Ishikawa Kenji; Tsutsumi Takayoshi; Hayashi Toshio; Takeda Keigo; Sekine Makoto; Hori Masaru;

  • 作者单位

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Inst Innovat Future Soc, Nagoya, Aichi 4648603, Japan;

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