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首页> 外文期刊>Japanese journal of applied physics >Thermal behavior analysis of interconnect structures of Si semiconductor devices using the temperature dependent reflectance of an incoherent light beam
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Thermal behavior analysis of interconnect structures of Si semiconductor devices using the temperature dependent reflectance of an incoherent light beam

机译：使用非相干光束的温度相关反射率分析Si半导体器件互连结构的热行为

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摘要

The amount of light reflected from the light-irradiated device varies depending on the surface temperature at that location. In this paper, we show that, by using an incoherent light beam with a noninvasive wavelength, it is possible to measure the temperature change of the interconnect structure with a size of mu m order Si semiconductor devices. As a method of measuring the temperature change, lock-in thermography has been reported. However, it is difficult to measure the temperature change of the fine structure. The spatial resolution of this method is about 10 mu m. Here, by using a noninvasive incoherent light beam, the spatial resolution of pm order is achieved. We applied this method to a 4-mu m-wide interconnect test element group (TEG) device with a passivation film to observe the temperature change of the interconnect structure. (C) 2018 The Japan Society of Applied Physics
机译：从光照射装置反射的光量根据该位置的表面温度而变化。在本文中，我们表明，通过使用具有非侵入性波长的非相干光束，可以测量具有微米级Si半导体器件尺寸的互连结构的温度变化。作为测量温度变化的一种方法，已经报道了锁定热成像法。然而，难以测量精细结构的温度变化。此方法的空间分辨率约为10微米。在此，通过使用非侵入性非相干光束，可以实现pm级的空间分辨率。我们将此方法应用于具有钝化膜的4微米宽的互连测试元件组（TEG）器件，以观察互连结构的温度变化。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第7s2期|07ME02.1-07ME02.5|共5页
  • 作者

    Endo Koichi; Midoh Yoshihiro; Nakamura Tomonori; Matsumoto Toru; Koshikawa Kazushige; Nakamae Koji;

  • 作者单位

    Toshiba Elect Devices & Storage Corp, Discrete Semicond Qual & Reliabil Engn Dept, Kawasaki, Kanagawa 2128583, Japan;

    Osaka Univ, Grad Sch Informat Sci & Technol, Dept Informat Syst Engn, Suita, Osaka 5650871, Japan;

    Hamamatsu Photon KK, Syst Div, Hamamatsu, Shizuoka 4313196, Japan;

    Hamamatsu Photon KK, Syst Div, Hamamatsu, Shizuoka 4313196, Japan;

    Hamamatsu Photon KK, Syst Div, Hamamatsu, Shizuoka 4313196, Japan;

    Osaka Univ, Grad Sch Informat Sci & Technol, Dept Informat Syst Engn, Suita, Osaka 5650871, Japan;

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