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A two-thickness subwavelength grating focusing lens for TE polarization light

机译:用于TE偏振光的两厚度亚波长光栅聚焦透镜

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摘要

A focusing lens for TE-polarization light based on silicon high-contrast subwavelength gratings (HCGs) with two different thicknesses is proposed. The key point in designing this structure is to obtain a total phase shift of 2 pi rad continuously by changing the period, duty cycle, and thickness of each grating bar simultaneously for TE polarization light. Meanwhile, a novel two-thickness method is presented to provide more suitable grating bars for the design of HCGs. The properties are numerically studied by the finite element method (FEM). The results show that the focal length is 7.2 mu m, the total transmissivity is 72%, and the full-width at half-maximum (FWHM) at the focal plane is 0.8 mu m at a wavelength of 1.55 mu m. This structure will be potentially integrated into optical devices, such as vertical cavity surface emitting lasers (VCSELs), photodetectors, CCDs, and CMOSs. We also estimate the two-thickness method to be a trade-off between high performances and fabricating accuracy. This lens as an example provides guides for the design of one-dimensional (1D) HCGs and provides suggestions for the design of 2D or 3D HCGs. (C) 2018 The Japan Society of Applied Physics
机译:提出了一种基于具有两种不同厚度的硅高对比度亚波长光栅(HCG)的TE偏振光聚焦透镜。设计此结构的关键是通过同时改变TE偏振光的周期,占空比和每个光栅棒的厚度,连续获得2 pi rad的总相移。同时,提出了一种新颖的两厚度方法,以为HCG的设计提供更合适的光栅条。通过有限元方法(FEM)对特性进行数值研究。结果表明,在1.55μm的波长下,焦平面的焦距为7.2μm,总透射率为72%,焦平面处的半峰全宽(FWHM)为0.8μm。这种结构可能会集成到光学设备中,例如垂直腔表面发射激光器(VCSEL),光电探测器,CCD和CMOS。我们还估计了两层厚度方法是高性能和制造精度之间的折衷方案。以该镜头为例,为一维(1D)HCG的设计提供了指导,并为2D或3D HCG的设计提供了建议。 (C)2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第8s2期|08PC04.1-08PC04.5|共5页
  • 作者单位

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

    Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;

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