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首页> 外文期刊>Japanese journal of applied physics >Two dimensional photonic crystal nanocavities with InAs/GaAs quantum dot active regions embedded by MBE regrowth
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Two dimensional photonic crystal nanocavities with InAs/GaAs quantum dot active regions embedded by MBE regrowth

机译:MBE再生长嵌入InAs / GaAs量子点有源区的二维光子晶体纳米腔

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摘要

We demonstrate two dimensional photonic crystal nanocavities embedding spatially-isolated active regions containing InAs/GaAs self-assembled quantum dots. We fabricated the GaAs-based structures by a combination of electron-beam lithography, dry/wet etching and crystal regrowth using molecular beam epitaxy. The fabricated nanocavity based on a photonic crystal double heterostructure supports a cavity mode with a high experimental quality factor over 10,000, despite the existence of a mound structure on the nanocavity formed during the regrowth. Using electromagnetic simulations, we discuss the origin of the cavity mode and a direction for further increasing the quality factor. The two dimensional photonic crystal nanocavities with buried quantum dot active regions will provide a useful platform for developing high performance nanolasers. (C) 2018 The Japan Society of Applied Physics
机译:我们演示了二维光子晶体纳米腔嵌入包含InAs / GaAs自组装量子点的空间隔离有源区域。我们通过结合电子束光刻,干/湿蚀刻和使用分子束外延进行晶体再生来制造基于GaAs的结构。尽管在再生长的过程中形成了纳米结构,但基于光子晶体双异质结构的纳米腔体却以超过10,000的高实验品质因数支持腔模。使用电磁仿真,我们讨论了腔模的起源以及进一步提高品质因数的方向。具有掩埋的量子点有源区的二维光子晶体纳米腔将为开发高性能纳米激光器提供有用的平台。 (C)2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第8s2期|08PD03.1-08PD03.4|共4页
  • 作者单位

    Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;

    Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan;

    Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan;

    Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan;

    Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;

    Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;

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