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首页> 外文期刊>Japanese journal of applied physics >Effect of annealing after CdS layer deposition on Cu_2ZnSn(S,Se)_4 solar cells fabricated from nanoparticles
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Effect of annealing after CdS layer deposition on Cu_2ZnSn(S,Se)_4 solar cells fabricated from nanoparticles

机译:CdS层沉积后退火对纳米颗粒制备的Cu_2ZnSn(S,Se)_4太阳能电池的影响

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摘要

We investigated the effect of post annealing following CdS deposition on Cu2ZnSn(S,Se)(4) solar cells fabricated from nanoparticles. The fill factor and short-circuit current density of Cu2ZnSn(S,Se)(4) solar cells increase by applying post annealing. Raman spectra showed that the crystallinity of CdS was improved. Electron-beam-induced current measurement revealed that the carrier transport near grain boundaries was improved by post annealing. The improvement of CdS/Cu2ZnSn(S,Se)(4) interfacial properties and carrier transport near grain boundaries causes decreases in ideality factor and series resistance, leading to the improvement of fill factor. (C) 2018 The Japan Society of Applied Physics
机译:我们研究了CdS沉积后退火对由纳米粒子制造的Cu2ZnSn(S,Se)(4)太阳能电池的影响。通过应用后退火,Cu2ZnSn(S,Se)(4)太阳能电池的填充系数和短路电流密度增加。拉曼光谱表明CdS的结晶度得到改善。电子束感应电流测量显示,通过后退火改善了在晶界附近的载流子传输。 CdS / Cu2ZnSn(S,Se)(4)界面性能的改善以及载流子在晶界附近的迁移会导致理想系数和串联电阻的降低,从而导致填充系数的提高。 (C)2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第8s3期|08RC06.1-08RC06.4|共4页
  • 作者单位

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

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