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首页> 外文期刊>Japanese journal of applied physics >N-type silicon solar cell with rear tunnel oxide combined with rear screen-printed electrodes
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N-type silicon solar cell with rear tunnel oxide combined with rear screen-printed electrodes

机译：N型硅太阳能电池，具有后隧道氧化物和后丝网印刷电极

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摘要

In this article, we describe an n-type silicon solar cell with a conversion efficiency of 21.9% on a 156 mm pseudosquare Czochralski (Cz) wafer with a rear tunnel oxide-passivated structure and rear screen-printed electrodes. The thermal degradation of the rear structure during electrode firing was solved by adding a SiNx film on the rear surface. Not only the SiNx film but also the tunnel oxide structure was chemically etched using firethrough screen-printed electrodes, so that the electrodes contacted directly to the bulk silicon. A phosphorus-diffused layer appeared at the bulk silicon immediately below the tunnel oxide, and this shallowly and densely diffused layer reduced the contact resistivity between the electrodes and the bulk silicon layer. Degradation of rear passivation caused by etching on the tunnel oxide structure was improved by adding a diffused layer using POCl3 before chemical oxidation. The diffused layer using POCl3 was deep and had a low phosphorus concentration, thus the field effect worked successfully while Auger recombination was not enhanced. (C) 2018 The Japan Society of Applied Physics
机译：在本文中，我们描述了一种具有156毫米伪正方形Czochralski（Cz）晶片的n型硅太阳能电池，其转换效率为21.9％，该晶片具有后部隧道氧化物钝化结构和后部丝网印刷电极。通过在后表面上添加SiNx膜，可以解决电极烧成过程中后结构的热降解。使用穿透式丝网印刷电极不仅可以化学蚀刻SiNx膜，而且还可以对隧道氧化物结构进行化学蚀刻，从而使电极直接与体硅接触。磷扩散层出现在隧道氧化物正下方的块状硅处，该浅而密集的层降低了电极与块状硅层之间的接触电阻率。通过在化学氧化之前使用POCl3添加扩散层，可以改善由于腐蚀隧道氧化物结构而引起的后钝化性能的降低。使用POCl3的扩散层较深且磷浓度低，因此场效应成功发挥了作用，而俄歇重组没有增强。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第8s3期|08RB16.1-08RB16.5|共5页
  • 作者

    Nishimura Kunihiko; Yashiki Yasutoshi; Morioka Takayuki; Kobayashi Yumiko; Watahiki Tatsuro; Tokioka Hidetada;

  • 作者单位

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

    Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan;

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